Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Randall D. Lewis"'
Publikováno v:
Microelectronics Reliability. 54:2675-2681
An early life failure mechanism was discovered on a 0.25-µm 40 V GaN FET technology. Through accelerated life testing (ALT), it was determined that the early life failure mechanism was thermally accelerated with a high activation energy, which means
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf3b3e8c28067d16fbcae79656a28a41
https://doi.org/10.1016/j.microrel.2014.09.017
https://doi.org/10.1016/j.microrel.2014.09.017
Autor:
Robert S. Howell, Deas Brown, H. George Henry, H. Hearne, Andris Ezis, Randall D. Lewis, Dale Dawson
Publikováno v:
Microelectronics Reliability. 54:2682-2687
The authors present a methodology for extrapolating the safe operating area for HBTs, accounting for variations in emitter area and ballast resistor size. Measurements of SOA curves for HBTs with varying emitter areas and ballast resistor sizes were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c0fd39320151776b3605acba6becc65
https://doi.org/10.1016/j.microrel.2014.09.018
https://doi.org/10.1016/j.microrel.2014.09.018
Autor:
Jeffrey D. Black, Cory E. Sherman, Randall D. Lewis, Sze Wong, Greg Marsh, Garry Cunningham, D.G. Pierce, Dennis A. Adams, Jason O'Brien, Bill Hand, Ian Manwaring
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2014:000136-000141
A memory retention study was performed on the W28C256 256k (32kx8) EEPROM device to assess its suitability for use in high temperature applications above 200°C. This study indicates this device has memory retention in excess of 5 years at 225°C. Du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7c9086e72ac5a97fd5b18ae040d8f1b
https://doi.org/10.4071/hitec-wa11
https://doi.org/10.4071/hitec-wa11
Autor:
Clyde N. Elliot, Marvin H. White, William L. Hand, Jeffrey A. Dame, Michael D. Fitzpatrick, Dennis A. Adams, Jeremiah J. Horner, Gan Wang, James J. Sheehy, Patrick B. Shea, Phillip L. Peyton, Norman P. Goldstein, Gary L. Grant, Randall D. Lewis, Joseph T. Smith, Erica C. Folk
Publikováno v:
2009 IEEE Radiation Effects Data Workshop.
A 1 Mb (128kx8) EEPROM using SONOS (silicon-oxide-nitride-oxide-silicon) technology has been designed and fabricated for radiation hardened space applications. To ensure reliable operation of flight units, the NGC W28C0108 128kx8 EEPROM has been expo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02b21b6549f662246f534e05d7754dbf
https://doi.org/10.1109/redw.2009.5336301
https://doi.org/10.1109/redw.2009.5336301
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.