Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Randal K. Goodall"'
Autor:
Tom Warner, Elton Williams, John C. Stover, W. Murray Bullis, Karen Gildersleeve, Randal K. Goodall, Benjamin Y. H. Liu, Bradley W. Scheer, Keung‐Shan Woo, Howard R. Huff, Dan Hirleman
Publikováno v:
Journal of The Electrochemical Society. 144:243-250
Distinguishing false counts caused by surface microroughness and haze when measuring particles below 0.1 μm has become a significant concern for ultralarge scale integrated (ULSI) product yield. Initial results are presented from an industry-wide, c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62001462b6faa47257b673ce30826175
https://doi.org/10.1149/1.1837392
https://doi.org/10.1149/1.1837392
Publikováno v:
Microelectronic Engineering. 45:169-182
Maturity of 300 mm polished wafers and early epi wafers were evaluated in respects of particles, flatness, metal contamination, and epitaxy thickness. Data of 300 mm polished wafers showed encouraging characteristics comparable to state-of-the-art 20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d08cb3b88e2888d5d63706e0f735863
https://doi.org/10.1016/s0167-9317(99)00134-3
https://doi.org/10.1016/s0167-9317(99)00134-3
Autor:
Howard R. Huff, Randal K. Goodall
Publikováno v:
The Electrochemical Society Interface. 5:31-35
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::819d00e15a17769cc57c9e2745771f0b
https://doi.org/10.1149/2.f07962if
https://doi.org/10.1149/2.f07962if
Autor:
Randal K. Goodall, Howard R. Huff
Publikováno v:
Solid State Phenomena. :65-96
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9f0c9f4270abca75fd374be708df44c
https://doi.org/10.4028/www.scientific.net/ssp.47-48.65
https://doi.org/10.4028/www.scientific.net/ssp.47-48.65
Publikováno v:
SPIE Proceedings.
The prevailing models for wafer flatness provide simulation of contact lithography via global flatness parameters such as GBIR, GFLD and GFLR and step-and-repeat lithography. Steppers are modeled as either non-leveling, global leveling or site-by-sit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b16f0cdbf2a7740796026bcfc95e0a1
https://doi.org/10.1117/12.350813
https://doi.org/10.1117/12.350813
Autor:
W. Murray Bullis, Syd R. Wilson, James A. Moreland, Howard R. Huff, Randal K. Goodall, Fritz G. Kirscht
Publikováno v:
The 1998 international conference on characterization and metrology for ULSI technology.
The Starting Materials requirements in the 1997 Semiconductor Industry Association (SIA) National Technology Roadmap for Semiconductors (NTRS) were developed by a fifty-nine member team comprised of industrial (e.g., silicon suppliers, equipment and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d4df2bd74bf0fe1042c111583f19ee5
https://doi.org/10.1063/1.56795
https://doi.org/10.1063/1.56795
Autor:
George W. Mulholland, Nelson P. Bryner, Walter S. Liggett, Randal K. Goodall, Bradley W. Scheer
Publikováno v:
SPIE Proceedings.
In response to the semiconductor industry's need for both smaller calibration particles and more accurately sized larger particles, a joint SEMATECH, National Institute of Standards and Technology, and VLSI Standards, Inc. project was initiated to ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a03d13f2193afe291152ceb27c2b88e6
https://doi.org/10.1117/12.256195
https://doi.org/10.1117/12.256195
Autor:
Randal K. Goodall
Publikováno v:
SPIE Proceedings.
Models are highlighted as the key, underpinning element of specification and characterization of silicon wafers in the semiconductor industry. The role of models in interconnecting specifications, metrology, and standards across the domains of proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b11a65c9e0d2f1781918d8feae5bd5c
https://doi.org/10.1117/12.256190
https://doi.org/10.1117/12.256190
Autor:
Howard R. Huff, Randal K. Goodall
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography X.
Model-based analysis is used to explain previous observations regarding the distributional form and numeric relationships of several key lithographic flatness quality metrics for silicon wafers. The dominant relationships are controlled by longer wav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe2088b41b84253e4756c8de88655010
https://doi.org/10.1117/12.240143
https://doi.org/10.1117/12.240143
Autor:
Satyendra S. Sethi, David Luo, Clifford H. Takemoto, Randal K. Goodall, Terry L. Von Salza Brown, James L. Kawski, Sagar M. Pushpala, H. Noguchi, Gabriel M. Li
Publikováno v:
SPIE Proceedings.
In this work critical dimension (CD) and site focal plane deviation (SFPD) measurements were made on a patterned resist test structure with 0.8 micron dense lines with a pitch of 1.6 micrometers . The CD and SFPD were tracked through all critical waf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72ce2e669abc23c931030448547372a0
https://doi.org/10.1117/12.174131
https://doi.org/10.1117/12.174131