Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Ranajoy Bhattacharya"'
Publikováno v:
Applied Sciences, Vol 14, Iss 11, p 4342 (2024)
This paper describes the principles behind the radio-frequency (RF) sensing of bacterial biofilms in pipes and heat exchangers in a dairy processing plant using an electromagnetic simulation. Biofilm formation in dairy processing plants is a common i
Externí odkaz:
https://doaj.org/article/6246b662093342a9b4fd459ec47a46c0
Autor:
Robert Hay, Ranajoy Bhattacharya, Winston Chern, Girish Rughoobur, Akintunde I. Akinwande, Jim Browning
Publikováno v:
Applied Sciences, Vol 13, Iss 23, p 12807 (2023)
Vacuum transistors (VTs) are promising candidates in electronics due to their fast response and ability to function in harsh environments. In this study, several oscillator and logic gate circuit simulations using VTs are demonstrated. Silicon-gated
Externí odkaz:
https://doaj.org/article/d29568243fd34db68d5d2144d1d41fd0
Publikováno v:
Applied Sciences, Vol 11, Iss 6, p 2540 (2021)
This paper examines basic crossed-field device physics in a planar configuration, specifically electron beam perturbation and instability as a function of variation in magnetic field, and angle between magnetic and electric field. We perform a three-
Externí odkaz:
https://doaj.org/article/efe1b69b565f496c8e7312770083b570
Autor:
Sun-Hong Min, Ohjoon Kwon, Matlabjon Sattorov, In-Keun Baek, Seontae Kim, Dongpyo Hong, Jin-Young Jeong, Jungmin Jang, Anirban Bera, Ranjan Kumar Barik, Ranajoy Bhattacharya, Ilsung Cho, Byungsu Kim, Chawon Park, Wongyun Jung, Seunghyuk Park, Gun-Sik Park
Publikováno v:
AIP Advances, Vol 8, Iss 2, Pp 025001-025001-8 (2018)
When a semiconductor element is irradiated with radiation in the form of a transient pulse emitted from a nuclear explosion, a large amount of charge is generated in a short time in the device. A photocurrent amplified in a certain direction by these
Externí odkaz:
https://doaj.org/article/c33d49bafa264c50ade9c5078a6b8270
Publikováno v:
IEEE Transactions on Electron Devices. 68:5244-5249
A complementary vacuum field emission device structure is proposed, and its operation is analyzed by multiphysics simulation. A freely moving double-clamped cantilever, which balances the electrostatic attraction force and elastic restoration force,
Autor:
Ranajoy Bhattacharya, Robert Hay, Mason Cannon, Nedeljko Karaulac, Girish Rughoobur, Akintunde Ibitayo Akinwande, Jim Browning
Publikováno v:
Journal of Vacuum Science & Technology B. 41:023201
Silicon gated field emitter arrays have been used as a vacuum transistor to demonstrate a 152 kHz Colpitts oscillator. The transfer and output characteristics of the 1000 × 1000 silicon arrays were measured using a collector placed ≈ 1 mm away wit
Publikováno v:
2021 IEEE International Conference on Plasma Science (ICOPS).
Crossed-field devices (CFDs) use orthogonal magnetic and electric fields to generate reliable, cycloidal flows of electrons 1 . Individual CFDs may vary greatly in geometry and purpose, such as simple planar devices, slow wave structure radio-frequen
Autor:
Isaac Wolstenholme, Akintunde I. Akinwande, Adam M. Darr, Ranajoy Bhattacharya, Mason Cannon, Andong Yue, Winston Chern, Jim Browning, Nedeljko Karaulac, Rushmita Bhattacharjee, Liz Gaffney, Girish Rughoobur, Gerardo Herrera, John McClarin, Allen L. Garner
Publikováno v:
2021 IEEE International Conference on Plasma Science (ICOPS).
High power magnetrons and crossed-field amplifiers (CFA) are advantageous in terms of power density and efficiency. However, electron beam stability in the crossed-field gap in terms of magnetic field tilt 1 , current density, and AC modulation of th
Autor:
Nedeljko Karaulac, Akintunde I. Akinwande, Winston Chern, Girish Rughoobur, Ranajoy Bhattacharya, Mason Canon, Jim Browning
Publikováno v:
2021 34th International Vacuum Nanoelectronics Conference (IVNC).
Ultra violet (UV) light assisted residual gas desorption was performed on silicon gated field emitter array (Si-GFEAs) with 1000×1000 tips. These GFEAs can be used as vacuum nano-transistors. Here, Si-GFEAs with tips are studied experimentally in no
Autor:
Akintunde I. Akinwande, Jim Browning, Winston Chern, Ranajoy Bhattacharya, Girish Rughoobur, Nedeljko Karaulac, Mason Cannon, Rushmita Bhattacharjee
Publikováno v:
2021 34th International Vacuum Nanoelectronics Conference (IVNC).
Specially designed silicon gated field emitter array (SiGFEA) tips are used as large current electron sources for crossed-field device experiments. Thirty-six discrete field emitter arrays, each made of 100×100 tips, are integrated in to a single di