Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Ran Bin Chen"'
Publikováno v:
Advanced Materials Research. 703:63-66
Wide-band gap semiconductor GaN is a promising material for direct-conversion nuclear micro-batteries to meet energy requirement for micro-systems. The properties of semiconductor GaN materials were studied by the interaction of beta radiation with G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ec9f24ba4dd077230e75974d6f122e8
https://doi.org/10.4028/www.scientific.net/amr.703.63
https://doi.org/10.4028/www.scientific.net/amr.703.63
Publikováno v:
Journal of Micromechanics & Microengineering; Nov2016, Vol. 26 Issue 11, p1-1, 1p