Výsledky vyhledávání - "Ramya, Cuduvally"

Field dependent study on the impact of co-evaporated multihits and ion pile-up for the apparent stoichiometric quantification of GaN and AlN

Autor: Richard J.H. Morris, Ramya Cuduvally, Jhao-Rong Lin, Ming Zhao, Wilfried Vandervorst, Mattias Thuvander, Claudia Fleischmann

Publikováno v: Ultramicroscopy. 241

For atom probe tomography, multihits and any associated ion pile-up are viewed as an "Achilles" heel when trying to establish accurate stoichiometric quantification. A significant reason for multihits and ion pile-up is credited to co-evaporation eve

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1055e38a9a925456670536a83a9ec3b
https://pubmed.ncbi.nlm.nih.gov/35988476

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Post-field ionization of Si clusters in atom probe tomography: A joint theoretical and experimental study

Autor: Ramya Cuduvally, Richard J. H. Morris, Giel Oosterbos, Piero Ferrari, Claudia Fleischmann, Richard G. Forbes, Wilfried Vandervorst

A major challenge for atom probe tomography (APT) quantification is the inability to decouple ions that possess the same mass–charge (m/n) ratio but a different mass. For example, 75As+ and 75As22+ at ∼75 Da or 14N+ and 28Si2+ at ∼14 Da cannot

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbc36d1e9790935b449964866e877a53

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Potential sources of compositional inaccuracy in the atom probe tomography of In

Autor: Ramya, Cuduvally, Richard J H, Morris, Piero, Ferrari, Janusz, Bogdanowicz, Claudia, Fleischmann, Davit, Melkonyan, Wilfried, Vandervorst

Publikováno v: Ultramicroscopy. 210

With the objective of applying laser-assisted atom probe tomography to compositional analysis within nanoscale InGaAs devices, experimental conditions that may provide an accurate composition estimate were sought by extensively studying an InGaAs bla

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::26145f97c39a34de4aa7556fe0b8f3a3
https://pubmed.ncbi.nlm.nih.gov/31918069

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Potential sources of compositional inaccuracy in the atom probe tomography of InxGa1-xAs

Autor: Davit Melkonyan, Wilfried Vandervorst, Janusz Bogdanowicz, Piero Ferrari, Claudia Fleischmann, Richard J. H. Morris, Ramya Cuduvally

Publikováno v: Ultramicroscopy. 210:112918

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8508e77fea48b89ba34ed286aa8979b4
https://doi.org/10.1016/j.ultramic.2019.112918

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Atom probe of GaN/AlGaN heterostructures: The role of electric field, sample crystallography and laser excitation on quantification

Autor: Ming Zhao, Wilfried Vandervorst, Richard J. H. Morris, Davit Melkonyan, Ramya Cuduvally, Paul van der Heide

Publikováno v: Ultramicroscopy. 206

Scaling and non-planar architectures are key factors helping to advance the semiconductor field. Accurate 3-dimensional atomic scale information is therefore sought but this presents a significant metrology challenge. Atom probe tomography has emerge

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c2345ed7fbd30dd65a24b1b976a4d8c
https://pubmed.ncbi.nlm.nih.gov/31351311

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Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors

Autor: Prathamesh Dhakras, Harold L. Hughes, Ramya Cuduvally, Phung Nguyen, Ji Ung Lee

Publikováno v: Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Scientific Reports

We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension of Natori’s model and includes transmission

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b45dc2cbdee448274265d763745fa46
http://arxiv.org/abs/1803.07920

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Toward accurate composition analysis of GaN and AlGaN using atom probe tomography

Autor: Davit Melkonyan, Paul van der Heide, Wilfried Vandervorst, Ming Zhao, Claudia Fleischmann, Richard J. H. Morris, Ramya Cuduvally, L. Arnoldi

Publikováno v: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36:03F130

With scaling of semiconductor devices showing no signs of abating and three-dimensional structures now being developed, new metrologies to meet these demands are being sought. Atom probe tomography offers the potential to meet these challenges, and h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::87bc5564885a26400f1f3e301c2f24a5
https://doi.org/10.1116/1.5019693

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