Zobrazeno 1 - 10
of 217
pro vyhledávání: '"Ramsteiner, Manfred"'
Autor:
Fernández-Garrido, Sergio, Ramsteiner, Manfred, Gao, Guanhui, Galves, Lauren A., Sharma, Bharat, Corfdir, Pierre, Calabrese, Gabriele, Schiaber, Ziani de Souza, Pfüller, Carsten, Trampert, Achim, Lopes, João Marcelo J., Brandt, Oliver, Geelhaar, Lutz
Publikováno v:
Nano Lett. 2017, 17, 9, 5213
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesize
Externí odkaz:
http://arxiv.org/abs/2401.16874
Autor:
Chen, Wenshan, Egbo, Kingsley, Tornatzky, Hans, Ramsteiner, Manfred, Wagner, Markus R., Bierwagen, Oliver
Publikováno v:
APL Mater. 11, 071110 (2023)
Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronics devices while quartz-like GeO2 shows piezoelectric properties. To explore these crystalline phases for application and fundamental material
Externí odkaz:
http://arxiv.org/abs/2304.11097
Autor:
Hoffmann, Georg, Zupancic, Martina, Klimm, Detlef, Schewski, Robert, Albrecht, Martin, Ramsteiner, Manfred, Bierwagen, Oliver
We report the growth of epitaxial LaInO3 on DyScO3(110) substrates by adsorption-controlled plasma-assisted molecular beam epitaxy (PA-MBE). The adsorption-controlled growth was monitored using line-of-sight quadrupole mass spectrometry. In a thermod
Externí odkaz:
http://arxiv.org/abs/2212.11736
Autor:
Oliva, Miriam, Flissikowski, Timur, Góra, Michał, Lähnemann, Jonas, Herranz, Jesús, Lewis, Ryan B., Marquardt, Oliver, Ramsteiner, Manfred, Geelhaar, Lutz, Brandt, Oliver
Publikováno v:
ACS Appl. Nano Mater. 6, 15278-15293 (2023)
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential for applications as light absorbers and emitters, it is crucial to unde
Externí odkaz:
http://arxiv.org/abs/2211.17167
Autor:
Auzelle, Thomas, Oliva, Miriam, John, Philipp, Ramsteiner, Manfred, Geelhaar, Lutz, Brandt, Oliver
Publikováno v:
Nanotechnology, 34, 375602 (2023)
The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles with ultrahigh ($>10$ $\mu$m$^{-2}$) or ultralow ($<1$ $\mu$m$^{-2}$) de
Externí odkaz:
http://arxiv.org/abs/2211.06274
Autor:
Papadogianni, Alexandra, Wouters, Charlotte, Schewski, Robert, Feldl, Johannes, Lähnemann, Jonas, Nagata, Takahiro, Kluth, Elias, Feneberg, Martin, Goldhahn, Rüdiger, Ramsteiner, Manfred, Albrecht, Martin, Bierwagen, Oliver
Publikováno v:
Phys. Rev. Materials 6, 033604 (2022)
In this work, we show the heteroepitaxial growth of single-crystalline bixbyite (In$_{1-x}$Ga$_x$)$_2$O$_3$ films on (111)-oriented yttria-stabilized zirconia substrates using plasma-assisted molecular beam epitaxy under various growth conditions. A
Externí odkaz:
http://arxiv.org/abs/2106.09612
Autor:
Lopes, J. Marcelo J., Czubak, Dietmar, Zallo, Eugenio, Figueroa, Adriana I., Guillemard, Charles, Valvidares, Manuel, Zuazo, Juan Rubio, López-Sanchéz, Jesús, Valenzuela, Sergio O., Hanke, Michael, Ramsteiner, Manfred
Publikováno v:
2D Materials 8, 041001 (2021)
Scalable fabrication of magnetic 2D materials and heterostructures constitutes a crucial step for scaling down current spintronic devices and the development of novel spintronic applications. Here, we report on van der Waals (vdW) epitaxy of the laye
Externí odkaz:
http://arxiv.org/abs/2104.09184
Autor:
Feldl, Johannes, Feneberg, Martin, Papadogianni, Alexandra, Lähnemann, Jonas, Nagata, Takahiro, Bierwagen, Oliver, Goldhahn, Rüdiger, Ramsteiner, Manfred
Publikováno v:
Applied Physics Letters 119, 042101 (2021)
The influence of Ga incorporation into cubic In$_2$O$_3$ on the electronic and vibrational properties is discussed for (In$_{1-x}$,Ga$_x$)$_2$O$_3$ alloy films grown by molecular beam epitaxy. Using spectroscopic ellipsometry, a linear dependence of
Externí odkaz:
http://arxiv.org/abs/2104.08092
Autor:
Czubak, Dietmar, Gaucher, Samuel, Oppermann, Lars, Herfort, Jens, Zollner, Klaus, Fabian, Jaroslav, Grahn, Holger T., Ramsteiner, Manfred
We studied metastable $\alpha$-FeGe$_2$, a novel layered tetragonal material, embedded as a spacer layer in spin valve structures with ferromagnetic Fe$_3$Si and Co$_2$FeSi electrodes. For both types of electrodes, spin valve operation is demonstrate
Externí odkaz:
http://arxiv.org/abs/2010.04453
Autor:
Budde, Melanie, Splith, Daniel, Mazzolini, Piero, Tahraoui, Abbes, Feldl, Johannes, Ramsteiner, Manfred, von Wenckstern, Holger, Grundmann, Marius, Bierwagen, Oliver
Publikováno v:
Appl. Phys. Lett. 117, 252106 (2020)
Vertical $pn$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$-type SnO layers with hole concentrations ranging from $p=10^{18}$ to $10^{19}$cm$^{-3}$ on unintentionally-doped $n$-type $\beta$
Externí odkaz:
http://arxiv.org/abs/2010.00362