Výsledky vyhledávání - "Ramsey Hazbun"

Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition

Autor: James Kolodzey, John Hart, Stefan Zollner, Thomas N. Adam, Ryan Hickey, Ramsey Hazbun, Ayana Ghosh, Nalin Fernando

Publikováno v: Journal of Crystal Growth. 444:21-27

The deposition of silicon using tetrasilane as a vapor precursor is described for an ultra-high vacuum chemical vapor deposition tool. The growth rates and morphology of the Si epitaxial layers over a range of temperatures and pressures are presented

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::25f722a2320fc53bdd1a2f6fa8a57bf6
https://doi.org/10.1016/j.jcrysgro.2016.03.018

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Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys

Autor: James Kolodzey, John Hart, Stefan Zollner, Ramsey Hazbun, David J. Eldridge, Ryan Hickey, Nalin Fernando, Thomas N. Adam

Publikováno v: Thin Solid Films. 604:23-27

Tetrasilane and digermane were used to grow epitaxial silicon germanium layers on silicon substrates in a commercial ultra-high vacuum chemical vapor deposition tool. Films with concentrations up to 19% germanium were grown at temperatures from 400 �

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c9b076624d416e31bb332deac513270
https://doi.org/10.1016/j.tsf.2016.03.010

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Theoretical study of the effects of strain balancing on the bandgap of dilute nitride InGaSbN/InAs superlattices on GaSb substrates

Autor: H. Hier, Keith W. Goossen, Ayub Fathimulla, Leye Aina, Nupur Bhargava, Victor A. Rodriguez-Toro, James Kolodzey, Ramsey Hazbun, L. Ramdas Ram-Mohan

Publikováno v: Infrared Physics & Technology. 69:211-217

The addition of nitrogen to III–V alloys has been widely studied as a method of modifying the band gap for mid-infrared (IR) applications. Lattice matching these alloys to convenient substrates such as GaSb, however, is challenging due to the signi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7a0198e211ff98ee8c4c759b78a13a90
https://doi.org/10.1016/j.infrared.2015.01.023

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Morphological Instability of High Ge Percent SiGe Films Grown by Ultra-High Vacuum Chemical Vapor Deposition

Autor: James Kolodzey, Ramsey Hazbun, James Nakos, Dean Siegel, John Hart, D. L. Harame, Christopher J. Funch

Publikováno v: ECS Transactions. 64:659-667

The Ge content in SiGe bipolar transistors (HBTs) has been steadily increasing for the past few decades in order to meet higher frequency targets. Problems exist with higher Ge content films due to the strain from the pseudomorphic growth on Si subst

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf20747e05ed1722621cf02a7e2d5c42
https://doi.org/10.1149/06406.0659ecst

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The characteristics of GeSn p-n junction devices fabricated by molecular beam epitaxy

Autor: David J. Eldridge, Ryan Hickey, Dainan Zhang, James Kolodzey, Ramsey Hazbun, John Hart

Publikováno v: 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM).

Germanium-tin is an emerging optoelectronic material, but its device properties are not yet well understood. To evaluate the feasibility of GeSn-based p-n junction diodes for device and circuit applications, layers of doped GeSn with Sn contents up t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cf7d36670bd127198863d93e8c4bb38a
https://doi.org/10.1109/phosst.2016.7548535

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Band structure and optical properties of pseudomorphic Ge1−x−ySixSny on Ge

Autor: Nalin Fernando, John Hart, Stefan Zollner, Ramsey Hazbun, Ryan Hickey, Dainan Zhang, James Kolodzey

Publikováno v: 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM).

Ge is an indirect band gap material. The band structure of Ge is a strong function of strain and alloy composition, and a transition from an indirect to a direct band gap has been observed for y∼6–10% for relaxed Ge 1_y Sn y indicating the possib

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::318367d8f80215deb327a4e5b8082441
https://doi.org/10.1109/phosst.2016.7548746

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Band gap and strain engineering of pseudomorphic Ge1−x−ySixSnyalloys on Ge and GaAs for photonic applications

Autor: Ramsey Hazbun, James N. Hilfiker, Ryan Hickey, John Hart, James Kolodzey, Stefan Zollner, Stefan Schoeche, Rigo A. Carrasco, Nalin Fernando

Publikováno v: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36:021202

The authors report the compositional dependence of the direct and indirect band gaps of pseudomorphic Ge1−x−ySixSny alloys on Ge and GaAs with (001) surface orientation determined from deformation potential theory and spectroscopic ellipsometry m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5924483241319ef2304648d33c62619a
https://doi.org/10.1116/1.5001948

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Properties of pseudomorphic and relaxed germanium1−xtinx alloys (x < 0.185) grown by MBE

Autor: John Hart, Stefan Zollner, Ramsey Hazbun, Ryan Hickey, James Kolodzey, Nalin Fernando

Publikováno v: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:021205

Epitaxial layers of Ge1−xSnx with Sn compositions up to 18.5% were grown on Ge (100) substrates via solid-source molecular beam epitaxy. Crystallographic information was determined by high resolution x-ray diffraction, and composition was verified

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4a2f15ccd241db79c483badaa1ecb9ec
https://doi.org/10.1116/1.4975149

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