Zobrazeno 1 - 10
of 393
pro vyhledávání: '"Rampazzo, F."'
Autor:
Favero, D., De Santi, C., Mukherjee, K., Borga, M., Geens, K., Chatterjee, U., Bakeroot, B., Decoutere, S., Rampazzo, F., Meneghesso, G., Zanoni, E., Meneghini, M.
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material properties. To this aim, we report a detailed analysis of breakdown p
Externí odkaz:
http://arxiv.org/abs/2210.10558
Autor:
Gao, Z., Rampazzo, F., Meneghini, M., De Santi, C., Chiocchetta, F., Marcon, D., Meneghesso, G., Zanoni, E.
Publikováno v:
Microelectronics Reliability, Volume 114, 2020, 113905
The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and 24 hours stress tests. Firstly, DC and EL characterization at room tem
Externí odkaz:
http://arxiv.org/abs/2107.08413
Publikováno v:
Microelectronics Reliability, Volumes 100-101, 2019, 113489
The reliability of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration was investigated by means of different stress tests. Firstly, DC and pulsed I-V characterization at room temperature are discussed, then dra
Externí odkaz:
http://arxiv.org/abs/2107.08412
Autor:
Pilati, M., Buffolo, M., Rampazzo, F., Lambert, B., Sommer, D., Grünenpütt, J., De Santi, C., Meneghesso, G., Zanoni, E., Meneghini, M.
Publikováno v:
In Microelectronics Reliability November 2023 150
Autor:
Graff, A., Simon-Najasek, M., Hübner, S., Lejoyeux, M., Altmann, F., Gao, V. Zhan, Rampazzo, F., Meneghini, M., Zanoni, E., Lambert, B.
Publikováno v:
In Microelectronics Reliability November 2023 150
Autor:
Romano, E., Bergamin, L., Berto, D., Chiocci, F.L., Miccadei, E., Paglia, G., Piattelli, V., Pierfranceschi, G., Rampazzo, F., Sorci, A., Taddei Ruggiero, E.
Publikováno v:
In Marine Geology January 2023 455
Autor:
Chiocchetta, F., De Santi, C., Rampazzo, F., Mukherjee, K., Grünenpütt, Jan, Sommer, Daniel, Blanck, Hervé, Lambert, Benoit, Gerosa, A., Meneghesso, G., Zanoni, E., Meneghini, M.
Publikováno v:
In Microelectronics Reliability November 2022 138
Publikováno v:
In Microelectronics Reliability November 2021 126
We consider an exit-time minimum problem with a running cost, $l\geq 0$ and unbounded controls. The occurrence of points where $l=0$ can be regarded as a transversality loss. Furthermore, since controls range over unbounded sets, the family of admiss
Externí odkaz:
http://arxiv.org/abs/1606.02612
Autor:
De Santi, C., Buffolo, M., Rossetto, I., Bordignon, T., Brusaterra, E., Caria, A., Chiocchetta, F., Favero, D., Fregolent, M., Masin, F., Modolo, N., Nardo, A., Piva, F., Rampazzo, F., Sharma, C., Trivellin, N., Zhan, G., Meneghini, M., Zanoni, E., Meneghesso, G.
Publikováno v:
In e-Prime - Advances in Electrical Engineering, Electronics and Energy 2021 1