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pro vyhledávání: '"Ramon M. delos Santos"'
Autor:
Ramon M. delos Santos, Jasher John A. Ibañes, Joel G. Fernando, Rafael B. Jaculbia, Jorge Michael M. Presto, Michael J. Defensor, Michelle B. Somintac, Paul Concepcion, Arnel A. Salvador, Armando Somintac
Publikováno v:
Science Diliman, Vol 20, Iss 1, Pp 31-38 (2008)
Gallium arsenide nanowires were grown on silicon (100) substrates by what is called the vapor-liquid-solid (VLS) growth mechanism using a molecular beam epitaxy (MBE) system. Good quality nanowires with surface density of approximately 108 nanowires
Externí odkaz:
https://doaj.org/article/53ba9164664b4c3ba62c685a403bb86f
