Zobrazeno 1 - 10
of 222
pro vyhledávání: '"Ramon Alcubilla"'
Publikováno v:
Applied Sciences, Vol 5, Iss 4, Pp 695-705 (2015)
During the last decade, transition metal oxides have been actively investigated as hole- and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides (V2O5, MoO3, WO3, and ReO3)
Externí odkaz:
https://doaj.org/article/f65a5e7aeb1948f9aebc6e6e5e92dbee
Autor:
A. Alcañiz, Gema López, Eloi Ros, Isidro Martín, Ramon Alcubilla, Alejandro Datas, Eric Calle, Luis G. Gerling, A. Jiménez, C. del Cañizo, Cristobal Voz
Publikováno v:
Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Solar Energy, ISSN 0038-092X, 2019, Vol. 181
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Solar Energy, ISSN 0038-092X, 2019, Vol. 181
© Elsevier. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ Very thin, thermally evaporated MoOx (x¿
Autor:
Thomas Tom, Cristobal Voz, Joan Bertomeu, Joaquim Puigdollers, Ramon Alcubilla, José Miguel Asensi, M. Garín, Ha T. Nguyen, Jordi Andreu, Isidro Martin Garcia, Pablo Ortega, Eloi Ros
Publikováno v:
IEEE Journal of Photovoltaics. 9:72-77
Dielectric/metal/dielectric structures based on vanadium pentoxide with a thin silver interlayer have been optimized to replace traditional transparent electrodes. As would be expected, there is a tradeoff in the metal thickness to achieve high trans
Stabilization of the J-V Characteristic of a Perovskite Solar Cell Using an Intelligent Control Loop
Autor:
Manuel Dominguez-Pumar, Guillermo Martínez-Denegri, Ramon Alcubilla, Chenna Reddy Bheesayagari, Jordi Martorell, Albert Orpella, Sandra Bermejo, Joan Pons-Nin
Publikováno v:
Electronics, Vol 10, Iss 121, p 121 (2021)
Electronics
Volume 10
Issue 2
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Electronics
Volume 10
Issue 2
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
The phenomena related to charge trapping are among the most relevant open issues that affect the long-term stability of perovskite-based devices. According to this, the objective of this paper is to report experimental results in which a charge contr
Autor:
Joaquim Puigdollers, Gema López, Isidro Martín, Eloi Ros, Gerard Masmitja, Albert Orpella, Juan M. Pinol, Cristobal Voz, Pablo Ortega, Ramon Alcubilla
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Universitat Politècnica de Catalunya (UPC)
© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d124dd2284fe8debe5ea3c39f6dae55
http://hdl.handle.net/2117/335140
http://hdl.handle.net/2117/335140
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
[EN] Planck's law constitutes one of the cornerstones in physics. It explains the well-known spectrum of an ideal blackbody consisting of a smooth curve, whose peak wavelength and intensity depend on the temperature of the body. This scenario changes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc3f3fc5c296340aa3a5ea2c1d10563f
https://hdl.handle.net/10251/150637
https://hdl.handle.net/10251/150637
Publikováno v:
IEEE Journal of Photovoltaics. 8:976-981
Laser processing of doped dielectric films has been proposed as a feasible alternative avoiding energy-consuming conventional dopant diffusions. In this approach, silicon surface passivation is usually obtained by means of a thin passivating layer de
Autor:
Joaquim Puigdollers, Cristobal Voz, Ramon Alcubilla, Pablo Ortega, Isidro Martín, Luis G. Gerling, Gerard Masmitja
Publikováno v:
Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
In the field of crystalline silicon solar cells, great efforts are being devoted to the development of selective contacts in search of a fully low-temperature and dopant-free fabrication process compatible with high photovoltaic conversion efficienci
Autor:
Luis G. Gerling, Joaquim Puigdollers, Gerard Masmitja, Ramon Alcubilla, Cristobal Voz, Pablo Ortega
Publikováno v:
Energy Procedia. 124:584-592
N-Type crystalline silicon (c-Si) heterojunctions with V 2 O 5 /SiO x stacks as passivating/hole-selective contacts are reported. SiO x interlayers were prepared by low temperature (T 2 O 5 at ambient temperature. A high surface passivation, with an
Autor:
Gerard Masmitja, Cristobal Voz, Ramon Alcubilla, Joaquim Puigdollers, Pablo Ortega, Eloi Ros, Luis G. Gerling, Zaira Barquera, Isidro Martín
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Universitat Politècnica de Catalunya (UPC)
This work studies a novel electron-selective contact for n-type silicon solar cells based on the modification of the cathode with a polymeric interlayer. Specifically, a thin layer of the conjugated polyelectrolyte PFN is intercalated before the Al c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9489e4d93ff44eeb8a4a3ed3774149c
http://hdl.handle.net/2117/179203
http://hdl.handle.net/2117/179203