Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Ramjay Pal"'
Autor:
Ratnamala Chatterjee, Ramjay Pal, Nidhi Gupta, K. K. Jain, Shankar Dutta, D. K. Bhattacharya, Isha Yadav
Publikováno v:
Microsystem Technologies. 25:3091-3096
This paper discusses about the fabrication of comb-structure with vertical sidewall profile by wet chemical etching of Si (110) substrate in boiling KOH solution. Etch rate of the Si (110) substrate in boiling KOH solution is 9 times higher with a 40
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cbf0cb5ba03b67fbc53b0b5e420d85c
https://doi.org/10.1007/s00542-018-4195-5
https://doi.org/10.1007/s00542-018-4195-5
Publikováno v:
Microsystem Technologies. 24:4855-4862
This paper presents the effect of vacuum packaging on the band-width of push–pull type capacitive accelerometer structure. The accelerometer structure (for ± 30 g application) consists of silicon proof mass (1000 μm × 1000 μm × 30 μm) suspend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dc6a1e8f30cf040945a61224aecabc7
https://doi.org/10.1007/s00542-018-3899-x
https://doi.org/10.1007/s00542-018-3899-x
Publikováno v:
Advanced Materials Letters. 9:169-174
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94300700e6f0a0cc59c9dc8f380b5133
https://doi.org/10.5185/amlett.2018.6973
https://doi.org/10.5185/amlett.2018.6973
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319976037
Gas sensing characteristics of the tin oxide SnO2 thin films towards ammonia (NH3) were investigated. This sensor exhibits good response and recovery at room temperature. In addition, SnO2 films were investigated for its structural, morphological, el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::267c30fabfda86e6fddad285cb4245db
https://doi.org/10.1007/978-3-319-97604-4_122
https://doi.org/10.1007/978-3-319-97604-4_122
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319976037
The paper reports on process design for fabrication of a navigational grade ±30 g MEMS capacitive push-pull accelerometer based on SOI (Silicon-On-Insulator) technology using Pyrex Glass-Silicon-Pyrex Glass multi-stack. The accelerometer structure i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbd1936c58d79387a7ff88bf1f5ed242
https://doi.org/10.1007/978-3-319-97604-4_111
https://doi.org/10.1007/978-3-319-97604-4_111
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319976037
To employ the MEMS device for navigational purpose; temperature stability, bias stability and linearity are the key parameters. In present paper, the effect of temperature variation on the output of z-axis capacitive accelerometer is discussed. In ab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e202e3d59d535d290e213c63af341324
https://doi.org/10.1007/978-3-319-97604-4_125
https://doi.org/10.1007/978-3-319-97604-4_125
Publikováno v:
Sensors & Transducers, Vol 203, Iss 8, Pp 8-15 (2016)
MEMS based accelerometers have already penetrated defense programs including navigation control in addition to their usual deployment in automotive, consumer and industrial markets because of their improved reliability, accuracy and excellent price p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::c3daea612861ce0d32062aa36f8bfd53
http://www.sensorsportal.com/HTML/DIGEST/august_2016/Vol_203/P_2846.pdf
http://www.sensorsportal.com/HTML/DIGEST/august_2016/Vol_203/P_2846.pdf
Publikováno v:
Materials Letters. 170:76-79
This paper presents deep boron diffusion induced damages in silicon (100), (110) and (111) surfaces. The silicon (100) and (110) samples showed a broad hump at the higher angle (ω) side during x-ray Rocking curve measurement; whereas, the (111) samp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92d8c309072c36898c2a27906e426040
https://doi.org/10.1016/j.matlet.2016.01.144
https://doi.org/10.1016/j.matlet.2016.01.144
Publikováno v:
Materials Letters. 164:316-319
Heavily boron doped silicon layer is being used to control the thickness of the bulk micro-machined micro-electro-mechanical system (MEMS) based structures. Residual stress generated due to the doping may affect the functioning and reliability of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b9dd211449e5ff918fed9b2a33f2d3b
https://doi.org/10.1016/j.matlet.2015.11.005
https://doi.org/10.1016/j.matlet.2015.11.005
Publikováno v:
Journal of Materials Science: Materials in Electronics. 25:3828-3832
This paper presents the effect of residual stresses due to deep boron diffusion on microaccelerometer structure. The microaccelerometer structure was simulated at various residual stresses using finite element method. The residual stress due to the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9c7f883cf2b7e6e20c51129d0a0e86c
https://doi.org/10.1007/s10854-014-2095-8
https://doi.org/10.1007/s10854-014-2095-8