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pro vyhledávání: '"Ramiro Rogelio Rodríguez"'
Autor:
Francisco Javier De la Hidalga Wade, Ramiro Rogelio Rodríguez, Pedro Rosales, Don L. Kendall, Wilfrido Calleja Arriaga, Alfonso Torres
Publikováno v:
ECS Transactions. 3:9-14
Even though the MOS technology was developed originally on the (0 0 1)-Si surface, some studies have shown that several MOS parameters can be optimized using other silicon orientations [1-3]. (1 1 4) and (5 5 12) Si surfaces presents a periodical sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78b0178efc5e09c4dd57ae1289969791
https://doi.org/10.1149/1.2789274
https://doi.org/10.1149/1.2789274
