Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Ramin Rajaei"'
Publikováno v:
IEEE Access, Vol 11, Pp 142263-142275 (2023)
In this study, we investigate the effects of intentional crosstalk noise on modern Multi-Processor System-on-Chips (MPSoCs). We demonstrate the potential for an adversary to inject false data into the communication network of the MPSoC, thereby creat
Externí odkaz:
https://doaj.org/article/c60a01a1d4e443f58682937958f09ed7
Autor:
Liu Liu, Ann Franchesca Laguna, Ramin Rajaei, Mohammad Mehdi Sharifi, Arman Kazemi, Xunzhao Yin, Michael Niemier, Xiaobo Sharon Hu
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 70:2356-2369
Autor:
Mingdai Yang, Qiuwen Lou, Ramin Rajaei, Mohammad Reza Jokar, Junyi Qiu, Yuming Liu, Aditi Udupa, Frederic T. Chong, John M. Dallesasse, Milton Feng, Lynford L. Goddard, X. Sharon Hu, Yanjing Li
Publikováno v:
ACM Journal on Emerging Technologies in Computing Systems. 19:1-24
Optical deep learning (DL) accelerators have attracted significant interests due to their latency and power advantages. In this article, we focus on incoherent optical designs. A significant challenge is that there is no known solution to perform sin
Publikováno v:
IEEE Transactions on Magnetics. 58:1-11
Publikováno v:
IEEE Transactions on Magnetics. 57:1-10
Approximate computing (AC) is a recently emerged computing paradigm that can trade in accuracy for power, area, and delay in accuracy-insensitive applications, such as image processing. Magnetic tunnel junction (MTJ) cells can further these AC advanc
Publikováno v:
IEEE Transactions on Magnetics. 57:1-10
By scaling down the technology node to the deep nanoscale, the vulnerability of digital circuits to radiation and the intensive increase of leakage power have become of concern. Accordingly, designing radiation-hardened (rad-hard) memory elements bas
Publikováno v:
IEEE Transactions on Electron Devices. 68:109-117
Content-addressable memories (CAMs) are widely used for data-centric applications where one must search for data patterns. CMOS CAMs can incur large areas and, hence, power consumption. Nonvolatile (NV) devices, such as ferroelectric field-effect tra
Autor:
Liu Liu, Mohammad Mehdi Sharifi, Ramin Rajaei, Arman Kazemi, Kai Ni, Xunzhao Yin, Michael Niemier, Xiaobo Sharon Hu
Publikováno v:
2022 Design, Automation & Test in Europe Conference & Exhibition (DATE).
Autor:
Ramin Rajaei, Abdolah Amirany
Publikováno v:
IEEE Transactions on Magnetics. 56:1-8
In this article, four novel approximate full-adder (AXFA) circuits based on the emerging magnetic tunnel junction (MTJ) device is proposed. The proposed magnetic FAs (MFAs) offer full nonvolatility, low area, and considerably lower energy consumption
Autor:
Xiaobo Sharon Hu, Michael Niemier, Arman Kazemi, Ann Franchesca Laguna, Kai Ni, Ramin Rajaei, Mohammad Mehdi Sharifi, Xunzhao Yin
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).