Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Ramesh Kumar Kakkerla"'
Autor:
Ramesh Kumar Kakkerla, 康克拉
107
In this thesis, the growth and characterization of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires (NWs) on Si (111) substrate by Metal Organic Chemical Vapor Deposition (MOCVD) are studied. Field-emission scanning el
In this thesis, the growth and characterization of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires (NWs) on Si (111) substrate by Metal Organic Chemical Vapor Deposition (MOCVD) are studied. Field-emission scanning el
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/n8npyc
Autor:
H. Bijo Joseph, Ankur Gupta, Venkatesan Nagarajan, Deepak Anandan, D. John Thiruvadigal, Ramesh Kumar Kakkerla, Sankalp Kumar Singh, Hung Wei Yu, Edward Yi Chang
Publikováno v:
Materials Science in Semiconductor Processing. 101:247-252
The performance of InAs/GaSb core-shell nanowire TFET is systematically investigated for the effects of intrinsic device parameters such as channel doping, shell thickness, spacer length and source offset. Device ON-current (ION) was chosen as the ke
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddb343d612127a1c16176b833fb08072
https://doi.org/10.1016/j.mssp.2019.06.004
https://doi.org/10.1016/j.mssp.2019.06.004
Autor:
Deepak Anandan, Ching-Ting Lee, Hua Lun Ko, Ramesh Kumar Kakkerla, Edward Yi Chang, Sankalp Kumar Singh, Hung Wei Yu, Venkatesan Nagarajan
Publikováno v:
Journal of Crystal Growth. 522:30-36
In this work, the influence of V/III ratio on self-catalyzed InSb nanowire (NW) crystal structure is investigated using metal organic chemical vapor deposition. The effective balance of V/III ratio determines the change of InSb NW crystal structure f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d21ed97d254c90473bf379e318b6b5f
https://doi.org/10.1016/j.jcrysgro.2019.06.016
https://doi.org/10.1016/j.jcrysgro.2019.06.016
Autor:
Deepak Anandan, Hua Lun Ko, Ching-Ting Lee, Ramesh Kumar Kakkerla, Sankalp Kumar Singh, Hung Wei Yu, Edward Yi Chang, Venkatesan Nagarajan
Publikováno v:
Journal of Crystal Growth. 506:45-54
In this study, growth of Au-free InAs/InSb vertical heterostructure (HS) nanowires (NWs) on highly lattice mismatched Si (1 1 1) substrate by metal organic chemical vapor deposition (MOCVD) is demonstrated. Careful selections of InSb growth parameter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e35b093bca4252a0b3c14ae29888d311
https://doi.org/10.1016/j.jcrysgro.2018.09.046
https://doi.org/10.1016/j.jcrysgro.2018.09.046
Autor:
Chih Jen Hsiao, Ramesh Kumar Kakkerla, Sankalp Kumar Singh, Deepak Anandan, Hung Wei Yu, Edward Yi Chang
Publikováno v:
Journal of Crystal Growth. 490:19-24
We demonstrate the growth of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires on Si (1 1 1) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on the morphology and growth rate of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f90c0ee445696cab82365d9dc1d79eee
https://doi.org/10.1016/j.jcrysgro.2018.03.007
https://doi.org/10.1016/j.jcrysgro.2018.03.007
Autor:
Deepak Anandan, H. Bijo Joseph, Edward Yi Chang, John Thiruvadigal D, Ramesh Kumar Kakkerla, Venkatesan Nagarajan, Sankalp Kumar Singh
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:061004
A comprehensive investigation with the help of 3D device simulation, we demonstrate the impact of fringing field on shell radius of InAs-GaSb core–shell nanowire n-channel tunnel field effect transistor (TFET) in this paper. Increase in shell radiu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5592eb9d9d0edda992324979a40d1408
https://doi.org/10.1149/2162-8777/ac0549
https://doi.org/10.1149/2162-8777/ac0549
Autor:
Sa Hoang Huynh, Ching Yi Hsu, Yu Chih Hung, Yung Yi Tu, Deepak Anandan, Edward Yi Chang, Chien Ting Wu, Minh Thien Huu Ha, Ramesh Kumar Kakkerla, Hung Wei Yu, Chun Jung Su
Publikováno v:
Journal of Electronic Materials. 47:1071-1079
High-density (∼ 80/um2) vertical InAs nanowires (NWs) with small diameters (∼ 28 nm) were grown on bare Si (111) substrates by means of two-step metal organic chemical vapor deposition. There are two critical factors in the growth process: (1) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbdb6a62397f86480ff0409ec7c97722
https://doi.org/10.1007/s11664-017-5878-x
https://doi.org/10.1007/s11664-017-5878-x
Autor:
Hung W. Yu, Venkateshan Nagarajan, Deepak Anandan, Ramesh Kumar Kakkerla, Sankalp Kumar Singh, Ankur Gupta, Edward Yi Chang
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319976037
The effect of Interface traps is investigated on the Homojunction Indium-Arsenide (InAs) gate all around nanowire tunneling FET (HJ-GAA-TFET). Device Ion/Ioff ratio was chosen as key Figure-of-Merit (FoM) in this investigation. Interface traps impact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27d0631d46f11a10572057d08892cedb
https://doi.org/10.1007/978-3-319-97604-4_178
https://doi.org/10.1007/978-3-319-97604-4_178
Autor:
Sankalp Kumar Singh, Hung Wei Yu, Venkatesan Nagarajan, Pragyey Kumar Kaushik, Edward Yi Chang, Ramesh Kumar Kakkerla, Deepak Anandan, Ankur Gupta
Publikováno v:
Engineering Research Express. 2:035004
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c2dbf6851e2628a35f7e390144caf73
https://doi.org/10.1088/2631-8695/aba169
https://doi.org/10.1088/2631-8695/aba169
Publikováno v:
2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC).
We demonstrate the self-catalyst (SC) growth of vertically aligned InAs and InAs/GaSb heterostructure nanowires on Si(111) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on morphology and growth rate fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60b615db4a8339377d1d3940b767005e
https://doi.org/10.1109/nmdc.2017.8350531
https://doi.org/10.1109/nmdc.2017.8350531