Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Ramesh G. Mani"'
Publikováno v:
Communications Physics, Vol 7, Iss 1, Pp 1-9 (2024)
Abstract Studies of fractional quantum Hall effects (FQHE) across various two-dimensional electronic systems (2DES) have helped to establish the equilibrium FQHE many-body ground states with fractionally charged excitations and composite particles in
Externí odkaz:
https://doaj.org/article/32d77905268c4abfb9f6cc811f1de033
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-8 (2024)
Abstract We study the transport properties of mm-scale CVD graphene p-n junctions, which are formed in a single gated graphene field effect transistor configuration. Here, an electrical-stressing-voltage technique served to modify the electrostatic p
Externí odkaz:
https://doaj.org/article/e115857672494c38bca4a373aa2aaea1
Autor:
U. Kushan Wijewardena, Tharanga R. Nanayakkara, Annika Kriisa, Christian Reichl, Werner Wegscheider, Ramesh G. Mani
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-12 (2022)
Abstract Two-dimensional electron systems subjected to high transverse magnetic fields can exhibit Fractional Quantum Hall Effects (FQHE). In the GaAs/AlGaAs 2D electron system, a double degeneracy of Landau levels due to electron-spin, is removed by
Externí odkaz:
https://doaj.org/article/a9b8cd1f509a4be796df607c295aacfe
Autor:
Ramesh G, Mani, Annika, Kriisa
Publikováno v:
Nature. 548(7665)
Linear polarization angle, $\theta$, dependent measurements of the microwave radiation-induced oscillatory magnetoresistance, $R_{xx}$, in high mobility GaAs/AlGaAs 2D electron devices have shown a $\theta$ dependence in the oscillatory amplitude alo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe09c67d132352d66e49fd06b585327f
http://arxiv.org/abs/1602.04114
http://arxiv.org/abs/1602.04114
Autor:
Ramesh G. Mani
Publikováno v:
Physics Today. 70:13-14
Publikováno v:
Scientific Reports
A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound di
Autor:
Ramesh G Mani
This experimental project funded by the ARO under grant # W911NF-10-1-0450 was concerned with the study of the electrical properties of low dimensional systems in a steady state non-equilibrium condition that is realized by photo-exciting the system
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07cb6ce25bb3994d42fe757fe921ed4c
https://doi.org/10.21236/ada622950
https://doi.org/10.21236/ada622950
Autor:
Ramesh G. Mani
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 25:189-197
The high mobility two-dimensional electron system exhibits vanishing resistance under photoexcitation at low temperatures in the vicinity of B=[4/(4j+1)]Bf. Here, the characteristic magnetic field B f =2πfm ∗ /e, m ∗ is an effective mass, e is t
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 12:152-156
A hyperfine interaction based approach for setting, measuring, and erasing nuclear polarization in quantum Hall nanostructures is developed for the realization of nuclear spin devices for quantum computing applications.