Zobrazeno 1 - 10 of 15 pro vyhledávání: '"Ramchandra M. Kotecha"'
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Akademický článek
Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design
Autor: Ramchandra M. Kotecha, Md Maksudul Hossain, Arman Ur Rashid, Asif Imran Emon, Yuzhi Zhang, H. Alan Mantooth
Publikováno v: IEEE Open Journal of Power Electronics, Vol 2, Pp 75-87 (2021)
This work presents a physics-based compact GaN device model that can predict the performance characteristics of a wide range of GaN devices for power electronics applications. The model has been validated against the measured characteristics of a 650
Externí odkaz: https://doaj.org/article/5c76f5c7ff6b40c0820b4af65d3ce4d8
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2
Multiscale electrothermal design of a modular multilevel converter for grid-tied applications
Autor: Ke Wang, Ramchandra M. Kotecha, Akanksha Singh, Xuhui Feng, Barry Mather, Sreekant Narumanchi, Boxue Xu, Jin Wang
Publikováno v: 2021 IEEE Energy Conversion Congress and Exposition (ECCE).
As a key feature of modular multilevel converters (MMCs), a large number of semiconductor devices are employed in the converter and distributed over a stack of submodules. Each submodule has a strict temperature limit that imposes constraints on the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b562d1cce7674667b3bf22faffd17088
https://doi.org/10.1109/ecce47101.2021.9595660
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3
Mission-Profile-Based Lifetime Prediction for a SiC mosfet Power Module Using a Multi-Step Condition-Mapping Simulation Strategy
Autor: Homer Alan Mantooth, Lorenzo Ceccarelli, Amir Sajjad Bahman, Ramchandra M. Kotecha, Francesco Iannuzzo
Publikováno v: Ceccarelli, L, Kotecha, R M, Bahman, A S, Iannuzzo, F & Mantooth, H A 2019, ' Mission-Profile-Based Lifetime Prediction for a SiC mosfet Power Module Using a Multi-Step Condition-Mapping Simulation Strategy ', IEEE Transactions on Power Electronics, vol. 34, no. 10, 8616890, pp. 9698-9708 . https://doi.org/10.1109/TPEL.2019.2893636
The reliability analysis and lifetime prediction for SiC-based power modules is crucial in order to fulfill the design specifications for next-generation power converters. This paper presents a fast mission-profile-based simulation strategy for a com
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b85191333581541775a5b9e1a4699718
https://doi.org/10.1109/tpel.2019.2893636
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4
A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices
Autor: Ramchandra M. Kotecha, Homer Alan Mantooth, Anthony Matthew Francis, Jerry L. Hudgins, Maksudul Hossain, Enrico Santi, Thomas A. Vrotsos, Sonia Perez, Arman Ur Rashid
Publikováno v: IEEE Transactions on Power Electronics. 34:8329-8341
This paper presents a unified physics-based insulated-gate bipolar transistor (IGBT) compact model for circuit simulation that predicts the performance of both Si and SiC, n - and p -channel devices. The model can predict the detailed switching wavef
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2365cf57f8e8f4f9935e788834aa849e
https://doi.org/10.1109/tpel.2018.2889263
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6
Modeling Needs for Power Semiconductor Devices and Power Electronics Systems
Autor: Gilberto Moreno, Sreekant Narumanchi, Ramchandra M. Kotecha, Barry Mather
Publikováno v: 2019 IEEE International Electron Devices Meeting (IEDM).
As energy systems move towards wide-spread electrification, penetration of power semiconductor devices and power electronics continue to grow at a rapid pace. This paper attempts at reviewing the state-of-the-art in power semiconductor modeling and t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cb4d35e7c9aad09d6f7eebf87cec1303
https://doi.org/10.1109/iedm19573.2019.8993449
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7
Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices
Autor: Ramchandra M. Kotecha, Sreekant Narumanchi, Barry Mather, Samuel Graham, Andriy Zakutayev, Samuel Kim, Paul Paret, Wyatt K. Metzger, Bidzina Kekelia, Kevin Bennion, Gilberto Moreno
Publikováno v: ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems.
Gallium oxide is an emerging wide band-gap material that has the potential to penetrate the power electronics market in the near future. In this paper, a finite-element gallium oxide semiconductor model is presented that can predict the electrical an
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::672364ba26ac1823632081d2fd733bdb
https://doi.org/10.1115/ipack2019-6453
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8
Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping
Autor: Ramchandra M. Kotecha, Lorenzo Ceccarelli, Alan Mantooth, Francesco Iannuzzo
Publikováno v: Ceccarelli, L, Kotecha, R, Iannuzzo, F & Mantooth, A 2018, Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping . in Proceedings of the 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018 ., 8590288, IEEE Press, pp. 1-6, 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018, Shenzhen, China, 04/11/2018 . https://doi.org/10.1109/PEAC.2018.8590288
A fast electro-thermal simulation strategy for SiC power MOSFETs is presented in this paper. This approach features the detailed mapping of the device power losses under a wide range of operating conditions by using a compact electrical model and its
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f84168187118bc1ff95615091471b0b5
https://doi.org/10.1109/peac.2018.8590288
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9
An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation
Autor: Lorenzo Ceccarelli, Arman Ur Rashid, Ramchandra M. Kotecha, Maksudul Hossain, H. Alan Mantooth
Publikováno v: Hossain, M M, Ceccarelli, L, Rashid, A U, Kotecha, R & Mantooth, H A 2018, An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation . in Proceedings of IECON 2018-44th Annual Conference of the IEEE Industrial Electronics Society . IEEE, Proceedings of the Annual Conference of the IEEE Industrial Electronics Society, pp. 1011-1016, 44th Annual Conference of the IEEE Industrial Electronics Society, Washington, District of Columbia, United States, 21/10/2018 . https://doi.org/10.1109/IECON.2018.8592522
IECON
A compact electro-thermal SiC Power MOSFET model implemented in LTSpice is presented in this paper. A 1200 V, 90A CREE SiC power MOSFET (C2M0025120D) has been used in this work to illustrate the parameter extraction and experimental model validation.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09c71911ef47cd3eefe6db945b1ccfaa
https://vbn.aau.dk/da/publications/2bacc2cd-c012-40a3-a450-c9b6afa1a430
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10
Thermal and Thermomechanical Modeling to Design a Gallium Oxide Power Electronics Package
Autor: Ramchandra M. Kotecha, Kevin Bennion, Gilberto Moreno, Paul Paret, Samuel Graham, Andriy Zakutayev, Sreekant Narumanchi, Barry Mather, Bidzina Kekelia, Samuel Kim, Xuhui Feng
Publikováno v: 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
There is significant interest in the power electronics industry in transitioning from silicon to wide-bandgap devices. Gallium oxide devices have the potential to offer comparable or even superior performance than other wide-bandgap devices, but at a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f9ee5f671aefa3e974ac73c272c43a8d
https://doi.org/10.1109/wipda.2018.8569139
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