Zobrazeno 1 - 10
of 369
pro vyhledávání: '"Ramaseshan, R."'
Publikováno v:
In Materials Research Bulletin December 2024 180
Autor:
Suganya, M., Ganesan, K., Vijayakumar, P., Gill, Amirdha Sher, Ramaseshan, R., Ganesamoorthy, S.
We report on the growth of Y2Ti2O7 single crystals by optical floating zone technique. X-ray diffraction and Raman spectroscopy studies confirm the structural quality of the crystal. The UV-Vis optical studies reveal that the grown crystals have a hi
Externí odkaz:
http://arxiv.org/abs/2006.07359
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
We report the uniaxial anisotropic optical constants of Wurtzite type AlN films deposited on Si (100) substrate using DC reactive magnetron sputtering as a function of growth temperature (Ts, 35 to 600 C). Evolution of optical properties with Ts is i
Externí odkaz:
http://arxiv.org/abs/1705.07729
Publikováno v:
In Optical Materials August 2021 118
Autor:
Panda, Padmalochan, Ramaseshan, R., Ravi, N, Mangamma, G., Jose, Feby, Dash, S., Suzuki, K., Suematsu, H.
We report the reduction in residual stress of AlN thin films and also the crystal structure, surface morphology and nanomechanical properties of magnetron sputtered as a function of substrate temperature (Ts, 35 - 600 ?C). The residual stress of thes
Externí odkaz:
http://arxiv.org/abs/1507.08113
Publikováno v:
In Ceramics International 15 October 2020 46(15):24183-24193
A modified electron beam evaporator has been used judiciously to synthesize TiN thin films with (111) preferred orientation. This new design involved in creating local plasma by accelerating the secondary electrons emitted from the evaporating ingot
Externí odkaz:
http://arxiv.org/abs/1410.1277
The temperature dependence of optical constants of titanium nitride thin film is investigated using spectroscopic ellipsometry between 1.4 to 5 eV in the temperature range 300 K to 650 K in steps of 50 K. The real and imaginary parts of the dielectri
Externí odkaz:
http://arxiv.org/abs/1308.0470
Autor:
Panda, Madhusmita, Krishnan, R., Madapu, Kishore K., Panda, Padmalochan, Sahoo, Madhusmita, Ramaseshan, R., Sundari, Tripura, Kamruddin, M.
Publikováno v:
In Applied Surface Science 1 August 2019 484:1176-1183