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Publikováno v:
AIP Conference Proceedings.
Ge2Sb2Te5 popularly known as GST is being explored for non-volatile phase change random access memory(PCRAM) applications. Under high electric field, thin films of amorphous GST undergo a phase change from amorphous to crystalline with a high contras
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7278154e00e187f20cd8da332fc367c9
https://doi.org/10.1063/1.5032933
https://doi.org/10.1063/1.5032933
