Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Raman散乱"'
Autor:
Islam, M. R., Verma, P., Yamada, Masayoshi, Kodama, Shigeo, Hanaue, Yasuhiro, Kinoshita, Kyoichi
Publikováno v:
宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystals. :61-71
Micro-Raman scattering and photoluminescence (PL) studies were performed to understand the polycrystallization mechanism in bulk In(x)Ga(1-x)As crystal grown by the two-step multi-component zone melting (MCZM) method. Raman studies were also performe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::8b1cfd2ee62639ad69757afa4d912bb7
http://id.nii.ac.jp/1696/00042838/
http://id.nii.ac.jp/1696/00042838/
Autor:
Fan, H.Y.
Publikováno v:
富山大学工学部紀要. 31:49-58
Metal-Insulator transition in (V__Cr_x)_2o_3(x≦O.03) has been studied by Raman scattering. The 1.5 % Cr-substituted V_2O_3 showed the high temperature insulator (I-phase) metal (M-phase) transition, without cyrstallographic change at 223K, where th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::6d0ec21b137f4c2d3a47322394608864
http://hdl.handle.net/10110/10233
http://hdl.handle.net/10110/10233