Zobrazeno 1 - 10
of 594
pro vyhledávání: '"Raman, Sankar"'
Autor:
Chan, Yao-Jui, Faizanuddin, Syed Mohammed, Kalaivanan, Raju, Raman, Sankar, Lin, Hsin, Kar, Uddipta, Singh, Akhilesh Kr., Lee, Wei-Li, Vankayala, Ranganayakulu K., Ou, Min-Nan, Wen, Yu-Chieh
Spectroscopic identification of distinct nonlinear photocurrents unveils quantum geometric properties of electron wavefunctions and the momentum-space topological structures. This is especially interesting, but still puzzling, for chiral topological
Externí odkaz:
http://arxiv.org/abs/2409.05424
Autor:
Naomi Tabudlong Paylaga, Chang-Ti Chou, Chia-Chun Lin, Takashi Taniguchi, Kenji Watanabe, Raman Sankar, Yang-hao Chan, Shao-Yu Chen, Wei-Hua Wang
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-9 (2024)
Abstract Atomically thin indium selenide (InSe) exhibits a sombrero-like valence band, leading to distinctive excitonic behaviors. It is known that the indirect band gap of atomically thin InSe leads to a weak emission from the lowest-energy excitoni
Externí odkaz:
https://doaj.org/article/af35ab21de484238ae14fbac74910307
Autor:
Gianluca D'Olimpio, Yanxue Zhang, Marcin Rosmus, Silvia Nappini, Atasi Chakraborty, Natalia Olszowska, Luca Ottaviano, Raman Sankar, Amit Agarwal, Federica Bondino, Junfeng Gao, Antonio Politano
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 10, Pp n/a-n/a (2024)
Abstract NbAs2, a topological semimetal, has stirred considerable interest for its potential usage in magnetic and fault‐tolerant quantum computation superconductor devices, owing to its superconductivity, enormous magnetoresistance, and anisotropi
Externí odkaz:
https://doaj.org/article/498298c496a249509e96b44cde860e61
Autor:
Srinivasa Reddy Tamalampudi, Juan Esteban Villegas, Ghada Dushaq, Raman Sankar, Bruna Paredes, Mahmoud Rasras
Publikováno v:
Advanced Photonics Research, Vol 4, Iss 11, Pp n/a-n/a (2023)
On‐chip integration of two‐dimensional (2D) materials holds immense potential for novel optoelectronic devices across diverse photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to its ultra‐high carrie
Externí odkaz:
https://doaj.org/article/9c7e6e4b66ca4ea5b65a81ffd530b95d
Autor:
Roshan Jesus Mathew, Kai‐Hsiang Cheng, Christy Roshini Paul Inbaraj, Raman Sankar, Xuan P.A. Gao, Yit‐Tsong Chen
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 8, Pp n/a-n/a (2023)
Abstract Novel anti‐ambipolar transistors (AATs) are gate tunable rectifiers with a marked potential for multi‐valued logic circuits. In this work, the optoelectronic applications of AATs in cryogenic conditions are studied, of which the AAT devi
Externí odkaz:
https://doaj.org/article/eb2bd1a8fe164d73ac63376d2e3f77c7
Autor:
Kanchan Yadav, Kalimuthu Moovendaran, Namasivayam Dhenadhayalan, Shang-Fan Lee, Man-Kit Leung, Raman Sankar
Publikováno v:
Sensors and Actuators Reports, Vol 5, Iss , Pp 100156- (2023)
Aflatoxins (AF) are fungal toxins which not only contaminate food, but also adversely impact human health if consumed and serve as biomarkers for deadly diseases like liver cancer. Therefore, there is a strong need to develop ultra-sensitive AF detec
Externí odkaz:
https://doaj.org/article/ffaf171b83ab4f5098c709831f9e795c
Now in its fourth edition, Pellock's Pediatric Epilepsy: Diagnosis and Therapy remains the gold standard for diagnosis, treatment, classification, and management of childhood epilepsies. With over 100 distinguished contributors from world-leading epi
Autor:
Jerome Engel Jr, Solomon L. Moshé, Astrid Nehlig, Denson G. Fujikawa, Raman Sankar, David E. Naylor, Andrey M. Mazarati, Claude G. Wasterlain
Publikováno v:
Epilepsia Open, Vol 8, Iss S1, Pp S7-S17 (2023)
Externí odkaz:
https://doaj.org/article/e5eaf844cda84cbe9633c52519f74b0f
Autor:
Raman Sankar
Publikováno v:
Epilepsia Open, Vol 8, Iss S1, Pp S141-S148 (2023)
Abstract The review presents retrospective, present views and future perspectives on the treatment of status epilepticus (SE). First, presynaptic, postsynaptic, and extrasynaptic mechanisms underlying sustaining ongoing seizure activity are highlight
Externí odkaz:
https://doaj.org/article/8d78bc281a56403da83709f0044ffc4f
Publikováno v:
In Current Applied Physics August 2022 40:74-82