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Oxygen migration in silicon corresponds to an apparently simple jump between neighboring bridge sites. Yet, extensive theoretical calculations have so far produced conflicting results and have failed to provide a satisfactory account of the observed
Externí odkaz:
http://arxiv.org/abs/cond-mat/9511110
Publikováno v:
International Journal of Trichology; Jan/Feb2023, Vol. 15 Issue 1, p36-38, 3p
Autor:
Pantelides, Sokrates T *, Ramamoorthy, Madhavan
Publikováno v:
In Journal of Non-Crystalline Solids 1999 254(1):38-46