Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Ramakrishnan Ayothi"'
Autor:
Tetsurou Kaneko, Nishikori Katsuaki, Kasahara Kazuki, Tomohiko Sakurai, Ken Maruyama, Satoshi Dei, Ramakrishnan Ayothi
Publikováno v:
Advances in Patterning Materials and Processes XXXVII.
Extreme ultraviolet (EUV) lithography is in the phase of first generation of high volume manufacturing. Next generation EUV lithography requires further improvement of resist performance such as resolution, sensitivity and pattern roughness. Therefor
Autor:
Tsuyoshi Furukawa, Anuja De Silva, Luciana Meli, Jing Guo, Dominik Metzler, Indira Seshadri, Ramakrishnan Ayothi, Yann Mignot, Nelson Felix, Dan Corliss, Abraham Arceo de la Pena, Lovejeet Singh, Yongan Xu
Publikováno v:
Advances in Patterning Materials and Processes XXXV.
Current EUV lithography pushes photoresist thickness reduction to sub-30 nm in order to meet resolution targets and mitigate pattern collapse. In order to maintain the etch budgets in hard mask open, the adhesion layer in between resist and hard mask
Autor:
Masafumi Hori, Hisashi Nakagawa, Takehiko Naruoka, Takakazu Kimoto, Tomoki Nagai, Tomohisa Fujisawa, Toru Kimura, Ramakrishnan Ayothi, Motohiro Shiratani, Kenji Hoshiko, Yoshi Hishiro
Publikováno v:
Journal of Photopolymer Science and Technology. 28:519-523
Extreme ultraviolet (EUV) lithography has emerged as a promising candidate for the manufacturing of semiconductor devices at the sub-14nm half pitch lines and spaces (LS) pattern for 7 nm node and beyond. The success of EUV lithography for the high v
Autor:
Ramakrishnan Ayothi, Brian Osborn
Publikováno v:
Functional Polymers: Design, Synthesis, and Applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b606df7f11746cc71c0e75e7aabddfcd
https://doi.org/10.1201/9781315366524-13
https://doi.org/10.1201/9781315366524-13
Autor:
Hisashi Nakagawa, Tsuyoshi Furukawa, Satoshi Dei, Hiromu Miyata, Masafumi Hori, Yoshi Hishiro, Motohiro Shiratani, Takehiko Naruoka, Tomoki Nagai, Ramakrishnan Ayothi
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VIII.
Extreme ultraviolet (EUV) lithography has been recognized as a promising candidate for the manufacturing of semiconductor devices as LS and CH pattern for 7nm node and beyond. EUV lithography is ready for high volume manufacturing stage. For the high
Autor:
Indira Seshadri, Anuja De Silva, Luciana Meli, Charlie Liu, Cheng Chi, Jing Guo, Kristin Schmidt, Hoa Truang, John C. Arnold, Nelson Felix, Lovejeet Singh, Tsuyoshi Furukawa, Ramakrishnan Ayothi, Angelique Raley, Richard Farrell
Publikováno v:
SPIE Proceedings.
Initial readiness of EUV patterning has been demonstrated at the 7-nm device node with the focus now shifting to driving the 'effective' k1 factor and enabling the second generation of EUV patterning. In current EUV lithography, photoresist thickness
Autor:
Genevieve Beique, Nicole Saulnier, Seulgi Han, John C. Arnold, Tae-Hwan Oh, Tsuyoshi Furukawa, Lovejeet Singh, Luciana Meli, Jeffrey C. Shearer, Indira Seshadri, Ramakrishnan Ayothi, Nelson Felix, Bassem Hamieh, Karen Petrillo, Lei Sun, Joe Lee, Anuja De Silva
Publikováno v:
SPIE Proceedings.
Initial readiness of EUV (extreme ultraviolet) patterning was demonstrated in 2016 with IBM Alliance's 7nm device technology. The focus has now shifted to driving the 'effective' k1 factor and enabling the second generation of EUV patterning. With th
Autor:
Kaori Sakai, Ken Maruyama, Kazunori Sakai, Andreia Santos, Takehiko Naruoka, Ramakrishnan Ayothi, Koji Inukai, Motohiro Shiratani, Tomohisa Fujisawa, Tomoki Nagai, Kenji Hoshiko
Publikováno v:
Journal of Photopolymer Science and Technology. 27:639-644
Autor:
Sin Yee Cindy Ng, Warren R. Zipfel, Ramakrishnan Ayothi, Jing Sha, Shalin J. Jhaveri, Christopher K. Ober, Jesse D. McMullen, Rudolf Zentel, Lorenz Steidl
Publikováno v:
J. Mater. Chem.. 19:505-513
Non-ionic photoacid generators (PAGs) have been designed and synthesized for use in two-photon lithography (TPL). The chromophores in these new PAGs are covalently linked to the photocleavable group by a flexible joint. Their thermal stability, solub
Publikováno v:
Chemistry of Materials. 19:3780-3786
Molecular glass photoresists have attracted increasing attention as next-generation replacements for traditional polymeric resists. Most of those reported so far have been based on a contrast generation mechanism known as chemical amplification, but