Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Ramakrishna Tadikonda"'
Autor:
Jinming Sun, Oliver Haeberlen, Clemens Ostermaier, Gerhard Prechtl, Ramakrishna Tadikonda, Eric Persson, Reenu Garg, Mohamed Imam, Sameh Khalil, Alain Charles
Publikováno v:
AIP Advances, Vol 11, Iss 5, Pp 055101-055101-10 (2021)
The addition of a p-GaN drain to a conventional gate-injection transistor (GIT), forming the so-called hybrid drain embedded GIT, is crucial in the suppression of the dynamic Rdson. The DC leakage due to hole injection is limited to around 10 nA/mm a
Externí odkaz:
https://doaj.org/article/395a853db1964f978a07212d211175e9
