Zobrazeno 1 - 10
of 210
pro vyhledávání: '"Rama K. Vasudevan"'
Publikováno v:
npj Computational Materials, Vol 10, Iss 1, Pp 1-8 (2024)
Abstract Materials synthesis platforms that are designed for autonomous experimentation are capable of collecting multimodal diagnostic data that can be utilized for feedback to optimize material properties. Pulsed laser deposition (PLD) is emerging
Externí odkaz:
https://doaj.org/article/349e8e98e1ba49c89fce054b80886b90
Autor:
Arpan Biswas, Yongtao Liu, Nicole Creange, Yu-Chen Liu, Stephen Jesse, Jan-Chi Yang, Sergei V. Kalinin, Maxim A. Ziatdinov, Rama K. Vasudevan
Publikováno v:
npj Computational Materials, Vol 10, Iss 1, Pp 1-12 (2024)
Abstract Optimization of experimental materials synthesis and characterization through active learning methods has been growing over the last decade, with examples ranging from measurements of diffraction on combinatorial alloys at synchrotrons, to s
Externí odkaz:
https://doaj.org/article/6f2ffb804d2c4fb5ba0bd0c944f8b6b8
Publikováno v:
Patterns, Vol 4, Iss 11, Pp 100858- (2023)
Summary: The broad adoption of machine learning (ML)-based autonomous experiments (AEs) in material characterization and synthesis requires strategies development for understanding and intervention in the experimental workflow. Here, we introduce and
Externí odkaz:
https://doaj.org/article/bd20b207e23848fc9a9fea6cc8b228da
Autor:
Yongtao Liu, Rama K. Vasudevan, Kyle P. Kelley, Hiroshi Funakubo, Maxim Ziatdinov, Sergei V. Kalinin
Publikováno v:
npj Computational Materials, Vol 9, Iss 1, Pp 1-8 (2023)
Abstract We report the development and experimental implementation of the automated experiment workflows for the identification of the best predictive channel for a phenomenon of interest in spectroscopic measurements. The approach is based on the co
Externí odkaz:
https://doaj.org/article/1bf3d97eb552450a93587ddca4350a18
Autor:
Panithan Sriboriboon, Huimin Qiao, Owoong Kwon, Rama K. Vasudevan, Stephen Jesse, Yunseok Kim
Publikováno v:
npj Computational Materials, Vol 9, Iss 1, Pp 1-8 (2023)
Abstract Hafnium oxide-based ferroelectrics have been extensively studied because of their existing ferroelectricity, even in ultra-thin film form. However, studying the weak response from ultra-thin film requires improved measurement sensitivity. In
Externí odkaz:
https://doaj.org/article/12264c3e13d143369d9d4bf4c8b5ec87
Publikováno v:
Carbon Trends, Vol 10, Iss , Pp 100234- (2023)
With new instrumentation design, robotics, and in-operando hyphenated analytical tool automation, the intelligent discovery of synthesis pathways is becoming feasible. It can potentially bridge the gap for the scale-up of new materials. We review cur
Externí odkaz:
https://doaj.org/article/c13e72cc9cf44561a911ee80dd101dba
Autor:
Sergei V. Kalinin, Mark P. Oxley, Mani Valleti, Junjie Zhang, Raphael P. Hermann, Hong Zheng, Wenrui Zhang, Gyula Eres, Rama K. Vasudevan, Maxim Ziatdinov
Publikováno v:
npj Computational Materials, Vol 7, Iss 1, Pp 1-12 (2021)
Abstract The advent of high-resolution electron and scanning probe microscopy imaging has opened the floodgates for acquiring atomically resolved images of bulk materials, 2D materials, and surfaces. This plethora of data contains an immense volume o
Externí odkaz:
https://doaj.org/article/13085c9b5ce442438a7c22e2d30d8e85
Publikováno v:
npj Computational Materials, Vol 7, Iss 1, Pp 1-10 (2021)
Abstract Advances in hyperspectral imaging including electron energy loss spectroscopy bring forth the challenges of exploratory and physics-based analysis of multidimensional data sets. The multivariate linear unmixing methods generally explore simi
Externí odkaz:
https://doaj.org/article/50212b02eba0430fb30e01559ae93cc2
Autor:
Trygve M. Ræder, Shuyu Qin, Michael J. Zachman, Rama K. Vasudevan, Tor Grande, Joshua C. Agar
Publikováno v:
Advanced Science, Vol 9, Iss 29, Pp n/a-n/a (2022)
Abstract Ferroelectrics are being increasingly called upon for electronic devices in extreme environments. Device performance and energy efficiency is highly correlated to clock frequency, operational voltage, and resistive loss. To increase performa
Externí odkaz:
https://doaj.org/article/7a22fcff8dd240b49397bfc801145f96
Autor:
Lukas Vlcek, Shize Yang, Yongji Gong, Pulickel Ajayan, Wu Zhou, Matthew F. Chisholm, Maxim Ziatdinov, Rama K. Vasudevan, Sergei V. Kalinin
Publikováno v:
npj Computational Materials, Vol 7, Iss 1, Pp 1-9 (2021)
Abstract Exploration of structure-property relationships as a function of dopant concentration is commonly based on mean field theories for solid solutions. However, such theories that work well for semiconductors tend to fail in materials with stron
Externí odkaz:
https://doaj.org/article/c867ca002f1b4ac285df393ed32a5cff