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pro vyhledávání: '"Ram Mohan Mooraka"'
Autor:
K.N. ManjulaRani, N. Lakshminarayanan, Nayan Patel, Samanta Santanu Kumar, Geetha Narasimhan, Helmut Puchner, Ravindra Kapre, Ram Mohan Mooraka
Publikováno v:
2009 IEEE International Integrated Reliability Workshop Final Report.
In this work, we report degradation study in 65nm technology NMOS I/O transistors (Tox=55 A) for different channel widths. Devices were stressed at maximum substrate current condition in order to stimulate HCI degradation. These measurements were val
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96a56b2c808222068fea0af7be8f8e7c
https://doi.org/10.1109/irws.2009.5383015
https://doi.org/10.1109/irws.2009.5383015
