Zobrazeno 1 - 10
of 120
pro vyhledávání: '"Ram Janay Choudhary"'
Autor:
Shailesh Kalal, Sanjay Nayak, Sophia Sahoo, Rajeev Joshi, Ram Janay Choudhary, Rajeev Rawat, Mukul Gupta
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-9 (2023)
Abstract Chromium nitride (CrN) spurred enormous interest due to its coupled magnetostructural and unique metal-insulator transition. The underneath electronic structure of CrN remains elusive. Herein, the electronic structure of epitaxial CrN thin f
Externí odkaz:
https://doaj.org/article/88aa7510fa9e4b838000bbdd4a00c60f
Autor:
Swati Parmar, Neetu Prajesh, Minal Wable, Ram Janay Choudhary, Suresh Gosavi, Ramamoorthy Boomishankar, Satishchandra Ogale
Publikováno v:
iScience, Vol 25, Iss 3, Pp 103898- (2022)
Summary: High-quality growth of MoS2-xNx films is realized on single-crystal c-Al2O3 substrates by the pulsed laser deposition (PLD) in ammonia rendering highly stable and tunable 1Tʹ/2H biphasic constitution. Raman spectroscopy reveals systematic e
Externí odkaz:
https://doaj.org/article/41a9705969244df4bbb3fbb4fda3a95b
Autor:
Neeta Gurbani, MSc, Ram Janay Choudhary, Ph. D., Deodutta Moreshwar Phase, Ph.D., Kazuhiro Marumoto, Ph. D., Ru-Shi Liu, Ph. D., Neelu Chouhan, Ph.D.
Publikováno v:
Chemical Engineering Journal Advances, Vol 6, Iss , Pp 100105- (2021)
The graphene oxide @nickel phosphate (GO:NPO) nanocomposites (NCs) are prepared by using a one-pot in-situ solar energy assisted method by varying GO:NPO ratio i.e. 0.00, 0.25, 0.50, 0.75, 1.00, 1.25, 1.50, and 2.00 without adding any surfactant or a
Externí odkaz:
https://doaj.org/article/28aa613aba434d03a14301a2d8f0e73d
Autor:
Ravikant, Charanjeet Singh, Anjali Panchwanee, Rajib K. Rakshit, Manju Singh, V. R. Reddy, Ram Janay Choudhary, V. N. Ojha, Ashok Kumar
Publikováno v:
AIP Advances, Vol 10, Iss 7, Pp 075206-075206-6 (2020)
We report the growth and polarization switching properties of epitaxial ferroelectric–superconducting heterostructure PbZr0.52Ti0.48O3 (PZT) (100 nm)/YBa2Cu3O7−δ (YBCO) (100 nm) thin films for non-volatile ferroelectric random access memory elem
Externí odkaz:
https://doaj.org/article/cb731e16a7894809aef87a2fe07dce8b
Autor:
Shankar Subhash Kekade, Prashant Vijay Gaikwad, Suyog Asaram Raut, Ram Janay Choudhary, Vikas Laxman Mathe, Deodatta Phase, Anjali Kshirsagar, Shankar Ishwara Patil
Publikováno v:
ACS Omega, Vol 3, Iss 5, Pp 5853-5864 (2018)
Externí odkaz:
https://doaj.org/article/65f6d92e1d814398b348fda41e1c7f5c
Autor:
Ashok Kumar Yadav, Sk Maidul Haque, Dinesh Shukla, Ram Janay Choudhary, S. N. Jha, D. Bhattacharyya
Publikováno v:
AIP Advances, Vol 5, Iss 11, Pp 117138-117138-17 (2015)
A set of r.f. sputter deposited ZnO thin films prepared with different Mn doping concentrations have been characterised by Extended X-ray Absorption Fine Structure (EXAFS) and X-ray Absorption Near Edge Spectroscopy (XANES) measurements at Zn, Mn and
Externí odkaz:
https://doaj.org/article/e7466a57e58a49609b08fa41158a973b
Autor:
Priyanka Yadav, Sumit Sarkar, Manju Sharma, Deodatta Moreshwar Phase, Ram Janay Choudhary, Rajamani Raghunathan
Publikováno v:
ACS Applied Electronic Materials. 5:418-428
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b2a4085726450c04e33d6c9aaf7b720
https://doi.org/10.1021/acsaelm.2c01442
https://doi.org/10.1021/acsaelm.2c01442
Publikováno v:
ACS Applied Electronic Materials. 4:4438-4445
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11c5306cfa4c7f873ffd54a5787c8cf5
https://doi.org/10.1021/acsaelm.2c00694
https://doi.org/10.1021/acsaelm.2c00694
Publikováno v:
ACS Applied Electronic Materials. 3:5095-5101
The topotactic phase transition in the transition-metal oxides via redox reactions has wide-ranging applications in solid oxide fuel cells, neuromorphic computations, mottronics, and memory devices...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c11ca367c2ae6b5cb50ff3b016defb14
https://doi.org/10.1021/acsaelm.1c00831
https://doi.org/10.1021/acsaelm.1c00831
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:260-269
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5a69595a7406b63d94ebfc8e4b57628
https://doi.org/10.1007/s10854-021-07290-7
https://doi.org/10.1007/s10854-021-07290-7