Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Ramūnas Aleksiejūnas"'
Autor:
Jovan Maksimovic, Haoran Mu, Daniel Smith, Tomas Katkus, Mantas Vaičiulis, Ramūnas Aleksiejūnas, Gediminas Seniutinas, Soon Hock Ng, Saulius Juodkazis
Publikováno v:
Micromachines, Vol 14, Iss 3, p 550 (2023)
Ultra-short 230 fs laser pulses of a 515 nm wavelength were tightly focused onto 700 nm focal spots and utilised in opening ∼0.4–1 μm holes in alumina Al2O3 etch masks with a 20–50 nm thickness. Such dielectric masks simplify the fabrication o
Externí odkaz:
https://doaj.org/article/6e8c8fb1f37941ef8073ebfddedd8c0f
Autor:
Lamiaa Abdelrazik, Vidmantas Jašinskas, Žydrūnas Podlipskas, Ramūnas Aleksiejūnas, Gintautas Tamulaitis, Vidmantas Gulbinas, Aurimas Vyšniauskas
Publikováno v:
Photonics, Vol 9, Iss 8, p 578 (2022)
Light-emitting diodes (LEDs) based on perovskite materials are a new group of devices that are currently undergoing rapid development. A significant fraction of these devices is based on quasi-2D perovskites fabricated with large organic cations. In
Externí odkaz:
https://doaj.org/article/aa4e27ff135e4e63b84210ea28371d4f
Autor:
Ričardas Norkus, Ramūnas Aleksiejūnas, Arūnas Kadys, Marek Kolenda, Gintautas Tamulaitis, Arūnas Krotkus
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-6 (2019)
Abstract Spectral dependence of terahertz emission is a sensitive tool to analyze the structure of conduction band of semiconductors. In this work, we investigate the excitation spectra of THz pulses emitted from MOCVD-grown InN and InGaN epitaxial l
Externí odkaz:
https://doaj.org/article/7f6166020a2c4030a818c69a38be130b
Autor:
Justinas Jorudas, Paweł Prystawko, Artūr Šimukovič, Ramūnas Aleksiejūnas, Jūras Mickevičius, Marcin Kryśko, Paweł Piotr Michałowski, Irmantas Kašalynas
Publikováno v:
Materials, Vol 15, Iss 3, p 1118 (2022)
A quaternary lattice matched InAlGaN barrier layer with am indium content of 16.5 ± 0.2% and thickness of 9 nm was developed for high electron mobility transistor structures using the metalorganic chemical-vapor deposition method. The structural, mo
Externí odkaz:
https://doaj.org/article/7f306e5799b74dddb7626d020b0010b4
Autor:
Kazimieras Nomeika, Žydrūnas Podlipskas, Mariamija Nikitina, Saulius Nargelas, Gintautas Tamulaitis, Ramūnas Aleksiejūnas
Publikováno v:
Journal of Materials Chemistry C. 10:1735-1745
The higher diffusivity in wider QWs increases the nonradiative recombination rate and reduces IQE.
Autor:
Jovan Maksimovic, Haoran Mu, Daniel Smith, Tomas Katkus, Mantas Vaičiulis, Ramūnas Aleksiejūnas, Gediminas Seniutinas, Soon Hock Ng, Saulius Juodkazis
Ultra-short 230 fs laser pulses of 515 nm wavelength were tightly focused into 700 nm focal spots and utilised in opening ~ 0.4 − 1 μm holes in alumina Al2O3 etch masks with 20-50 nm thickness. Such dielectric masks simplify fabrication of photoni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e3b5e75d306cd4f3b5efff059267ed2
Autor:
Chuanjiang Qin, Ramūnas Aleksiejūnas, Vaiva Soriūtė, Chihaya Adachi, Toshinori Matsushima, Takashi Fujihara, Džiugas Litvinas, Patrik Ščajev, Paulius Baronas, Saulius Juršėnas
Publikováno v:
Journal of Materials Chemistry C. 9:4782-4791
Quasi-two dimensional perovskites demonstrate unique excitonic properties due to their multilayer structure making them attractive for various optoelectronic applications. However, the thickness of individual perovskite sheets in wet cast quasi-2D la
Autor:
Vitalij Kovalevskij, Žydrūnas Podlipskas, Gintautas Tamulaitis, Ramūnas Aleksiejūnas, Marek Kolenda, D. Dobrovolskas, Arūnas Kadys, J. Jurkevičius
Publikováno v:
Journal of Alloys and Compounds. 789:48-55
Carrier dynamics were studied in InN, which is a promising material for radiation-resistant optoelectronic devices. InN epilayers with different background electron densities were prepared by metal-organic chemical vapor deposition and irradiated wit
Autor:
Arūnas Kadys, Ramūnas Aleksiejūnas, R. Norkus, Arūnas Krotkus, Marek Kolenda, Gintautas Tamulaitis
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-6 (2019)
Scientific reports, London : Nature Publishing Group, 2019, vol. 9, art. no. 7077, p. 1-6
Scientific Reports
Scientific reports, London : Nature Publishing Group, 2019, vol. 9, art. no. 7077, p. 1-6
Scientific Reports
Spectral dependence of terahertz emission is a sensitive tool to analyze the structure of conduction band of semiconductors. In this work, we investigate the excitation spectra of THz pulses emitted from MOCVD-grown InN and InGaN epitaxial layers wit
Autor:
Cheyenne Lynsky, Oleg Kravcov, James S. Speck, Claude Weisbuch, Saulius Nargelas, Ramūnas Aleksiejūnas, Shuji Nakamura, K. Nomeika, Leah Y. Kuritzky
Publikováno v:
Physical Review Applied. 14
The diffusion coefficient of holes can provide knowledge about carrier localization in ($\mathrm{In}$,$\mathrm{Ga}$)$\mathrm{N}$, where the carrier dynamics are altered by randomly fluctuating potential landscape. In group-III nitrides, the diffusivi