Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Ramón Collazo"'
Publikováno v:
Ingeniería Hidráulica y Ambiental, Vol 39, Iss 3 (2018)
El MultiH.Virtual es un laboratorio virtual con treinta y cuatro diferentes prácticas y se ha empleado por más de doce años en la enseñanza de materias de Mecánica de los Fluidos en la carrera universitaria de Ingeniería Hidráulica en varias u
Externí odkaz:
https://doaj.org/article/3845f96370024135b4488d4a36445b50
Autor:
Christopher T. Shelton, Isaac Bryan, Elizabeth A. Paisley, Edward Sachet, Jon F. Ihlefeld, Nick Lavrik, Ramón Collazo, Zlatko Sitar, Jon-Paul Maria
Publikováno v:
APL Materials, Vol 5, Iss 9, Pp 096109-096109-8 (2017)
A two-step homoepitaxial growth process producing step-free surfaces on low dislocation density, Ga-polar ammonothermal GaN single crystals is described. Growth is conducted under very low supersaturation conditions where adatom incorporation occurs
Externí odkaz:
https://doaj.org/article/aaf4b19538fb41cc86e228e5c17c2d63
Autor:
Rohan Sengupta, Shipra Vaidya, Dennis Szymanski, Dolar Khachariya, Michal Bockowski, Grzegorz Kamler, Pramod Reddy, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis
Publikováno v:
ACS Applied Nano Materials. 6:5081-5086
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c8c966ba8eb4f8cf94aff5e5c15f3f3
https://doi.org/10.1021/acsanm.3c00038
https://doi.org/10.1021/acsanm.3c00038
Autor:
Eric Ramón Collazo Cisneros, Gerardo Romero Pardo, Rosa María Castañeda González, Geovanis Olivares Paizan
Publikováno v:
Revista Científica del Amazonas. 5:15-24
El artículo tiene como objetivo mostrar el sistema de acciones desarrolladas en el aprendizaje del idioma inglés en los espacios virtuales del técnico medio en Enfermería en la Universidad de Ciencias Médicas de Santiago de Cuba. La propuesta de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fd38ca189c0240597fc2db55ad1cfcc
https://doi.org/10.34069/ra/2022.10.02
https://doi.org/10.34069/ra/2022.10.02
Publikováno v:
physica status solidi (a). 220
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7665dee71d067ffd1923f9a93d1e644
https://doi.org/10.1002/pssa.202200390
https://doi.org/10.1002/pssa.202200390
Autor:
Shashwat Rathkanthiwar, Pramod Reddy, Baxter Moody, Cristyan Quiñones-García, Pegah Bagheri, Dolar Khachariya, Rafael Dalmau, Seiji Mita, Ronny Kirste, Ramón Collazo, Zlatko Sitar
Publikováno v:
Applied Physics Letters. 122:152105
High p-conductivity (0.7 Ω−1 cm−1) was achieved in high-Al content AlGaN via Mg doping and compositional grading. A clear transition between the valence band and impurity band conduction mechanisms was observed. The transition temperature depend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52d49b474f621d4f199f5942d2086bcc
https://doi.org/10.1063/5.0143427
https://doi.org/10.1063/5.0143427
Autor:
Pegah Bagheri, Cristyan Quiñones-Garcia, Dolar Khachariya, James Loveless, Yan Guan, Shashwat Rathkanthiwar, Pramod Reddy, Ronny Kirste, Seiji Mita, James Tweedie, Ramón Collazo, Zlatko Sitar
Publikováno v:
Applied Physics Letters. 122:142108
Highly conductive Ge-doped AlN with conductivity of 0.3 (Ω cm)−1 and electron concentration of 2 × 1018 cm−3 was realized via a non-equilibrium process comprising ion implantation and annealing at a moderate thermal budget. Similar to a previou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbddbc7c46a821984a0d50643cc8465f
https://doi.org/10.1063/5.0146439
https://doi.org/10.1063/5.0146439
Autor:
Shane R. Stein, Dolar Khachariya, Seiji Mita, M. Hayden Breckenridge, James Tweedie, Pramod Reddy, Kacper Sierakowski, Grzegorz Kamler, Michał Boćkowski, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis
Publikováno v:
Applied Physics Express. 16:031006
We investigate the electrical characteristics of Ni Schottky contacts on n-type GaN films that have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating implanted Mg. Contacts deposited on these films exhibit low recti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::064f7c305b7164663b272aafaee60396
https://doi.org/10.35848/1882-0786/acc443
https://doi.org/10.35848/1882-0786/acc443
Publikováno v:
Applied Physics Letters. 120
In this work, we measure DC and AC conductivity and Hall voltage to determine the origin of electrical insulating properties of Fe-doped β-Ga2O3 single crystals, which are measured perpendicular to the 2¯01 crystallographic plane. We find that elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7862a1f1e0ef2aa86941b1042c8a724
https://doi.org/10.1063/5.0093588
https://doi.org/10.1063/5.0093588
Autor:
Dolar Khachariya, Seiji Mita, Pramod Reddy, Saroj Dangi, J. Houston Dycus, Pegah Bagheri, M. Hayden Breckenridge, Rohan Sengupta, Shashwat Rathkanthiwar, Ronny Kirste, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis
Publikováno v:
Applied Physics Letters. 120
The ultra-wide bandgap of Al-rich AlGaN is expected to support a significantly larger breakdown field compared to GaN, but the reported performance thus far has been limited by the use of foreign substrates. In this Letter, the material and electrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4a9ce9b63e5d32698aec000329f0c14
https://doi.org/10.1063/5.0083966
https://doi.org/10.1063/5.0083966