Zobrazeno 1 - 10
of 1 403
pro vyhledávání: '"Ramírez, Rafael A."'
Autor:
Sánchez, Alitzel López, Ramírez-Rafael, José Antonio, Flores-Lamas, Alejandro, Hernández-Rosales, Maribel, Lafond, Manuel
In this study, we investigate the problem of comparing gene trees reconciled with the same species tree using a novel semi-metric, called the Path-Label Reconciliation (PLR) dissimilarity measure. This approach not only quantifies differences in the
Externí odkaz:
http://arxiv.org/abs/2407.06367
Autor:
Herrero, Carlos P., Ramirez, Rafael
Publikováno v:
Mol. Phys. e2348112 (2024)
Various condensed phases of water, spanning from the liquid state to multiple ice phases, have been systematically investigated under extreme conditions of pressure and temperature to delineate their stability boundaries. This study focuses on probin
Externí odkaz:
http://arxiv.org/abs/2405.18053
Publikováno v:
Phys. Rev. B 109, 104112 (2024)
Silicon carbide, a semiconducting material, has gained importance in the fields of ceramics, electronics, and renewable energy due to its remarkable hardness and resistance. In this study, we delve into the impact of nuclear quantum motion, or vibrat
Externí odkaz:
http://arxiv.org/abs/2405.13733
Autor:
Herrero, Carlos P., Ramirez, Rafael
Publikováno v:
Eur. Phys. J. B 96, 147 (2023)
Graphene has become in last decades a paradigmatic example of two-dimensional and so-called van-der-Waals layered materials, showing large anisotropy in their physical properties. Here we study the elastic properties and mechanical stability of graph
Externí odkaz:
http://arxiv.org/abs/2311.12514
Publikováno v:
Chem. Phys. 573, 112005 (2023)
Silicon carbide is a hard, semiconducting material presenting many polytypes, whose behavior under extreme conditions of pressure and temperature has attracted large interest. Here we study the mechanical properties of 3C-SiC over a wide range of pre
Externí odkaz:
http://arxiv.org/abs/2307.10050
Autor:
Herrero, Carlos P., Ramirez, Rafael
Publikováno v:
J. Phys. Chem. Solids 171, 110980 (2022)
Two-dimensional (2D) silicon carbide is an emergent direct band-gap semiconductor, recently synthesized, with potential applications in electronic devices and optoelectronics. Here, we study nuclear quantum effects in this 2D material by means of pat
Externí odkaz:
http://arxiv.org/abs/2209.15549
Publikováno v:
Chem. Phys. 561, 111597 (2022)
The hydrogen dynamics on a graphene sheet is studied in the presence of carbon vacancies. We analyze the motion of atomic H by means of molecular dynamics (MD) simulations, using a tight-binding Hamiltonian fitted to density-functional calculations.
Externí odkaz:
http://arxiv.org/abs/2209.13328
Autor:
Jiménez Rios, Alejandro, L. Petrou, Margarita, Ramirez, Rafael, Plevris, Vagelis, Nogal, Maria
Publikováno v:
In Journal of Building Engineering 1 November 2024 96
Autor:
Robledo-Taboada, Luis Humberto a, b, Chiñas-Castillo, Fernando a, ⁎, Caballero-Caballero, Magdaleno b, Camacho-López, Santiago c, Méndez-Blas, Antonio d, Jiménez-Jarquín, Javier Francisco a, Feria-Reyes, Rossy a, Suarez-Martínez, Reynier f, Serrano-de la Rosa, Laura Elvira d, Barranco-Cisneros, Jacob e, Alavez-Ramirez, Rafael b
Publikováno v:
In Journal of Materials Research and Technology November-December 2024 33:3275-3282
Publikováno v:
Miscellanea Geographica: Regional Studies on Development, Vol 28, Iss 2, Pp 47-53 (2024)
The aim of this study is to assess the importance of geotourism before, during and after the eruption of the Tajogaite Volcano (September to December 2021) on La Palma, Spain. The methodology applied consisted of identifying the geotourism products o
Externí odkaz:
https://doaj.org/article/bd9a61fdf4334f9c938ded94e8a724a2