Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Ralph-Uwe Barz"'
Publikováno v:
Journal of Crystal Growth. 360:193-196
Bulk AlN single crystals (3 mm thick and 1 in. diameter) were hetero-epitaxially grown on (0001) 6H–SiC substrates by the sublimation method. Double-crystal x-ray diffraction and micro-Raman results confirm the good crystallinity as well as structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::168835c818ac71c0874091d817547686
https://doi.org/10.1016/j.jcrysgro.2011.11.054
https://doi.org/10.1016/j.jcrysgro.2011.11.054
Publikováno v:
physica status solidi (a). 209:415-418
Aluminium nitride (AlN) bulk single crystals were grown on off-oriented4H-SiC substrates by the sublimation method. High-quality crystals withabout 25 mm in diameter and up to 5 mm in thickness were obtained withan optimized growth process. The cryst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b4d3d1bd2890841a2c55d2d6e688a89
https://doi.org/10.1002/pssa.201100348
https://doi.org/10.1002/pssa.201100348
Publikováno v:
Journal of Crystal Growth. 245:273-277
The solubility of gallium orthophosphate (GaPO 4 ) in 15 M phosphoric acid has been studied in the temperature range between 150°C and 250°C. The data were determined using an experimental set-up, which was especially designed for the purpose of di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05e1ca3011139f8cd86cbdb8f23cf24f
https://doi.org/10.1016/s0022-0248(02)01734-7
https://doi.org/10.1016/s0022-0248(02)01734-7
Publikováno v:
Journal of Crystal Growth. :843-847
Single crystals of gallium orthophosphate (GaPO 4 ) being isostructural to low-quartz are usually grown from strong acidic solutions. To maintain a good structural perfection of the crystals, the growth rate of the respective growing interface has to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc5a623aff3f7ee009073181d932f85e
https://doi.org/10.1016/s0022-0248(01)02049-8
https://doi.org/10.1016/s0022-0248(01)02049-8
Publikováno v:
physica status solidi c. 8:2107-2109
AlN single crystals with 25 mm diameter and 3 mm thickness were grown on on-axis, Si-terminated, (001) 6H-SiC substrates with a growth rate of 20-25 μm/h by the sublimation method. The growth conditions were optimised and the grown crystals exhibit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::299dc4173e2bab2f21d07f65dcf1b083
https://doi.org/10.1002/pssc.201000941
https://doi.org/10.1002/pssc.201000941
Publikováno v:
Materials Science and Engineering: A. :143-146
In the ternary Al–Co–Ni system, decagonal quasicrystals occur that are thermodynamically stable and can be grown using rather conventional crystal growth techniques at near-equilibrium conditions. Detailed studies of the Al-rich part of the terna
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cc721f862c709dc2131fb603f39d294
https://doi.org/10.1016/s0921-5093(00)01324-1
https://doi.org/10.1016/s0921-5093(00)01324-1
Publikováno v:
Journal of Crystal Growth. 220:522-530
Etch figures on gallium orthophosphate (GaPO4) crystals are presented for the {001}, {010},f2 10 g,f210 g and {101} faces. Primarily they are used in detecting possibly occurring domains of twinning. Generally, the etch figures of GaPO4 show similari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::261bf8668ea2dbc707240c3734c0dcc8
https://doi.org/10.1016/s0022-0248(00)00892-7
https://doi.org/10.1016/s0022-0248(00)00892-7
Publikováno v:
Zeitschrift für Kristallographie - Crystalline Materials. 214:845-849
Phase transitions of gallium orthophosphate (GaPO4) have been studied by thermal analysis between ambient temperature and 1100°C. In situ X-ray powder diffraction at selected temperatures confirmed the three known polymorphic structure types of low-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80954d0a448ca6ef8e62ca2d55041825
https://doi.org/10.1524/zkri.1999.214.12.845
https://doi.org/10.1524/zkri.1999.214.12.845
Publikováno v:
Crystal Research and Technology. 34:1121-1127
Gallium orthophosphate (GAPO4) single crystals have been grown from phosphoric acid solutions under hydrothermal conditions. The crystals have been studied in terms of twinning because of the strong effect of this structural defect on the piezoelectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ae5506e1e49cbd2476400c65f129c5d
https://doi.org/10.1002/(sici)1521-4079(199911)34:9<1121::aid-crat1121>3.0.co
https://doi.org/10.1002/(sici)1521-4079(199911)34:9<1121::aid-crat1121>3.0.co
Autor:
Ralph-Uwe Barz, Peter Gille
Publikováno v:
Journal of Crystal Growth. 149:196-200
Defects resulting from the crystallization of mother liquid inclusions are a common occurrence in crystals grown by the travelling heater method. The need to distinguish these defects from defects formed by solid-state precipitation is stressed. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57116f1a6fc8af65bbdf729b66a4df09
https://doi.org/10.1016/0022-0248(94)01017-x
https://doi.org/10.1016/0022-0248(94)01017-x