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Autor:
Tom Donohue, Alex L. Flamholz, Carl Stahlhammer, Srinivas B. Bollepalli, Franco Cerrina, R. Viswanathan, Mumit Khan, Dan Galburt, Shalom J. Wind, Victor Pol, James Buchigniano, Juan R. Maldonado, Ralph Amodeo, Scott Daniel Hector, D. A. Heald, Azalia A. Krasnoperova
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:2517
Complex patterns with 75–125 nm feature sizes exposed with x-ray lithography are shown. Lithographic results for 75–125 nm lines with varying pitch are compared to simulations of image formation and resist dissolution, showing good qualitative ag