Zobrazeno 1 - 10
of 199
pro vyhledávání: '"Ralph A. Logan"'
Autor:
David Alan Ackerman, Gleb Shtengel, Paul A. Morton, Mark S. Hybertsen, Rudolf F. Kazarinov, Ralph A. Logan, Tawee Tanbun-Ek
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 1:250-263
Rapid decrease of differential gain has been determined to dominate the temperature dependence of threshold current in 1.3-/spl mu/m multiquantum well and bulk active lasers giving rise to low values of T/sub 0/. Extensive experimental characterizati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50bf5a567adfecf4cec30e80b8d8771c
https://doi.org/10.1109/2944.401204
https://doi.org/10.1109/2944.401204
Autor:
A.M. Sergent, Tawee Tanbun-Ek, Young-Kai Chen, J.E. Johnson, E.K. Byrne, A. Tate, S.N.G. Chu, J.A. Grenko, K.W. Wecht, P.F. Sciortine, Ralph A. Logan
Publikováno v:
Journal of Crystal Growth. 145:902-906
A device quality of selective epitaxy growth of InGaAsP/InP multiple quantum well (MQW) structure using low-pressure metalorganic vapor phase epitaxy (MOVPE) technique is described. The technique is applied to a monolithically integrated electroabsor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d169f4f7f1f5ceda861fb1fa0b31639
https://doi.org/10.1016/0022-0248(94)91161-4
https://doi.org/10.1016/0022-0248(94)91161-4
Autor:
Charles A. Burrus, Young-Kai Chen, K.C. Reichmann, P. D. Magill, Won-Tien Tsang, Ralph A. Logan, Fow-Sen Choa, A.M. Sergent, Ming C. Wu, S.N.G. Chu
Publikováno v:
IEEE Journal of Quantum Electronics. 30:1370-1380
We demonstrated the successful operation of long-wavelength InGaAsP low threshold-current index-coupled and gain-coupled DFB lasers grown by chemical beam epitaxy (CBE). For index-coupled DFB lasers, buried-heterostructure six-QW DFB lasers (250 /spl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec7d32460f408fb07cdfb7c05dfba2b7
https://doi.org/10.1109/3.299459
https://doi.org/10.1109/3.299459
Publikováno v:
Journal of Applied Physics. 74:5602-5605
The effects of the SiN layer normally used to passivate and protect the exposed junction surfaces in InP/InGaAs heterojunction bipolar transistors have been studied and shown to degrade the transistor properties. These effects are ascribed primarily
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dba34c56daf29c5a2c79d07dcef6ca14
https://doi.org/10.1063/1.354221
https://doi.org/10.1063/1.354221
Publikováno v:
Journal of Applied Physics. 73:4444-4447
A simple fitting technique based on the current balancing concept has been used to calculate the minority‐carrier diffusion length Ln in the base layer of an InP/InGaAs single‐heterojunction bipolar transistor grown by metalorganic chemical‐vap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::747af8fc5ca9357773917da0cad89fda
https://doi.org/10.1063/1.354070
https://doi.org/10.1063/1.354070
Publikováno v:
Journal of Crystal Growth. 130:287-294
Growth patterns were observed layer by layer, during the atmospheric pressure metalorganic vapor phase epitaxy of InP layers around etched mesas with various shapes. Results indicate that InP layers growing from the sidewall bend over the SiO 2 mask
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::297d429c1fe0bbdd3e00701ad15fec49
https://doi.org/10.1016/0022-0248(93)90863-r
https://doi.org/10.1016/0022-0248(93)90863-r
Autor:
Peter A. Andrekson, Victor Mizrahi, Tawee Tanbun-Ek, A.M. Sergent, D.L. Coblentz, Paul A. Morton, K.W. Wecht, P. Lemaire, Ralph A. Logan, P.F. Sciortino
Publikováno v:
IEEE Photonics Technology Letters. 5:28-31
The authors report a mode-locked pulse source with extremely wide operating frequency range and very stable operation, through the use of a long, linearly chirped Bragg reflector as the output coupler integrated in a fiber external cavity. A 1.55 mu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bbaf8e5f8dfe0dd13ae56a552bed109
https://doi.org/10.1109/68.185050
https://doi.org/10.1109/68.185050
Autor:
A.M. Sergent, Fow-Sen Choa, Charles A. Burrus, S. N. G. Chu, Won-Tien Tsang, Ming C. Wu, P. D. Magill, Ralph A. Logan, Young-Kai Chen, K.C. Reichmann
Publikováno v:
Journal of Crystal Growth. 124:716-722
We have demonstrated successful operation of long wavelength InGaAsP low threshold-current gain-coupled DFB lasers. This is accomplished by using a InGaAsP quarternary grating or quantum well grating that absorbs the DFB emission. The use of a quantu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16b7e0b47c3149eb6e0ef324d534a432
https://doi.org/10.1016/0022-0248(92)90541-p
https://doi.org/10.1016/0022-0248(92)90541-p
Autor:
Peter A. Andrekson, D.L. Coblentz, S. N. G. Chu, Ralph A. Logan, K.W. Wecht, Tawee Tanbun-Ek, A.M. Sergent
Publikováno v:
IEEE Photonics Technology Letters. 4:685-688
Novel MQW integrated passive waveguide (IPW) DFB lasers have been fabricated using a selective area MOVPE growth technique. Detailed measurements of the absorption loss of the passive waveguide in the structure as well as its influences on the laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e94dad562ad4909bbe3f75280ca9c479
https://doi.org/10.1109/68.145238
https://doi.org/10.1109/68.145238
Autor:
N.A. Olsson, Jay R. Simpson, K.W. Wecht, Tawee Tanbun-Ek, Ralph A. Logan, Peter A. Andrekson, Paul A. Morton, D.J. Digiovanni
Publikováno v:
IEEE Photonics Technology Letters. 4:644-647
The first complete nonlinear optical-loop mirror demultiplexing experiments including error-rate measurements are reported. Broadband demultiplexing of 16-, 32-, and 64-Gb/s, 2/sup 15/-1 data was performed using only semiconductor lasers. The penalty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ba09c2747ee75ea34ce2b3dd0807c99
https://doi.org/10.1109/68.141996
https://doi.org/10.1109/68.141996