Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Ralf Siemieniec"'
Publikováno v:
2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe).
Publikováno v:
ISPS'21 Proceedings.
Design considerations for charge‐compensated fast‐switching power MOSFET in the medium‐voltage range
Publikováno v:
IET Power Electronics. 11:638-645
Low-voltage power metal-oxide-semiconductor field-effect transistors (MOSFETs) based on charge compensation using a field plate offer a significant reduction of the area-specific on-resistance. The extension of their blocking capability into the so-c
Autor:
Phil Rutter, Richard K. Williams, Mohamed N. Darwish, Yusuke Kawaguchi, Ralf Siemieniec, Richard A. Blanchard
Publikováno v:
IEEE Transactions on Electron Devices. 64:674-691
The historical and technological development of the ubiquitous trench power MOSFET (or vertical trench VDMOS) is described. Overcoming the deficiencies of VMOS and planar VDMOS, trench VDMOS innovations include pioneering efforts in reactive ion etch
Autor:
Richard A. Blanchard, Phil Rutter, Mohamed N. Darwish, Yusuke Kawaguchi, Ralf Siemieniec, Richard K. Williams
Publikováno v:
IEEE Transactions on Electron Devices. 64:692-712
The technological development of application specific VDMOS and lateral trench power MOSFETs is described. Unlike general-purpose trench vertical DMOS, application specific trench DMOS comprise devices merged or optimized for a specific function or c
Autor:
Thomas Aichinger, Ralf Siemieniec, Wolfgang Jantscher, Rene Mente, Ute Wenzel, David Kammerlander
Publikováno v:
2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe).
This work introduces a new SiC Trench MOSFET technology with 650 V nominal blocking voltage. The technology is tailored to address the needs of power supplies in the power range from several hundred watts to some tens of kilowatts including server an
Autor:
Michael Hutzler, Ralf Siemieniec, Oliver Blank, David Laforet, Li Juin Yip, Alan Huang, Ralf Walter
Publikováno v:
Facta universitatis - series: Electronics and Energetics. 28:477-494
Low-voltage power MOSFETs based on charge-compensation using a field-plate offer a significant reduction of the area-specific on-resistance. Beside a further improvement of this key parameter, the new device generation takes an in-depth focus on the
Autor:
Thomas Basler, Ralf Siemieniec, Thomas Aichinger, Romain Esteve, Wolfgang Bergner, Dethard Peters, Bernd Zippelius, Daniel Kück
Publikováno v:
2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe).
This work discusses the challenges in the design of a SiC Power MOSFET compared to their silicon-based relatives and describes a novel SiC Trench MOSFET concept. The most prominent difficulties being identified are related to the properties of the ch
Autor:
Thomas Basler, Romain Esteve, Wolfgang Bergner, Dethard Peters, Daniel Kueck, Thomas Aichinger, Ralf Siemieniec
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
This paper describes a novel SiC trench MOSFET concept. The device is designed to balance low conduction losses with Si-IGBT like reliability. Basic features of the static and dynamic performance as well as short circuit capability of the 45mΩ/1200
Publikováno v:
Microelectronics Reliability. 52:509-518
Wide band-gap semiconductors are most attractive as materials for power devices due to low losses, improved temperature capability and high thermal conductivity. Although silicon carbide Schottky diodes have been commercially available on the market