Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Ralf M. Bertenburg"'
Autor:
Joachim Würfl, Armin Liero, Ralf M. Bertenburg, Wolfgang Heinrich, Matthias Rudolph, Günther Tränkle, Nidhi Chaturvedi, Ibrahim Khalil, Mike Dewitz, Justin Miller, C. Wipf
Publikováno v:
2009 IEEE MTT-S International Microwave Symposium Digest.
GaN-based low-noise amplifiers (LNAs) recently were shown to provide high ruggedness together with low noise figure. These LNAs allow for simplified receiver architectures, e.g., since no limiter is required to protect the input. This paper for the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c28eb879661c34627f6bf9f64e0b96c
https://doi.org/10.1109/mwsym.2009.5165813
https://doi.org/10.1109/mwsym.2009.5165813
Autor:
Arkady Kaplan, Paul Goldgeier, Andreas Brennemann, Yaakov Achiam, Arie Hershkovits, P.S. Cho, Ralf M Bertenburg, Art Greenblatt, Geof Harston, Benjamim Adoram
Publikováno v:
Optical Amplifiers and Their Applications/Coherent Optical Technologies and Applications.
A 1550-nm coherent receiver with a LiNbO3 optical hybrid and balanced photoreceivers integrated in a single compact package is reported. Frequency response of the integrated receiver and bit-error-rate measurements of optical PSK signals are describe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1953e94b1feafb2fcc113054e02ba748
https://doi.org/10.1364/cota.2006.cthb2
https://doi.org/10.1364/cota.2006.cthb2
Publikováno v:
Charged Particle Optics III.
We present a new resist and exposure strategy applicable to the fabrication of sub-micron gate-length heterostructure field-effect transistors (HFET) with T-shaped (mushroom) gate contacts. Using selected polymethylmethacrylate (PMMA) resists as well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daf97ced4305ae5a106a6c7c1e771a70
https://doi.org/10.1117/12.279393
https://doi.org/10.1117/12.279393
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