Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Ralf M T Pijper"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 59:763-771
Two algorithms for distributed open-short (OS) and open-short-load de-embedding of multiport on-wafer S -parameter measurements are presented, and used for the characterization of four-port differential amplifiers operating in the 60-GHz band. For bo
Publikováno v:
Microelectronics Reliability. 51:560-565
In the face of increasing demands for high frequency and high output power of modern bipolar transistor circuits, electronic circuit designers are exploring regimes of transistor operation that meet both requirements and enter RF regimes, where impac
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 58:1599-1608
In this paper, we show that the differential noise figure of differential amplifiers is better measured directly by using baluns rather than be derived from single-ended measurements. For on-wafer measurements at 60 GHz, this can best be done using R
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 58:419-433
A new algorithm for open-short-load de-embedding of on-wafer S-parameter measurements is presented. Since in typical on-wafer RF transistor test-structures the imperfect grounding of the internal ports is the dominant source of crosstalk between port
Publikováno v:
Physical Review B, 69(15):155216, 155216-1/10. American Physical Society
Al/Cs/MDMO-PPV/ITO (where MDMO-PPV stands for poly[2-methoxy-5-${(3}^{\ensuremath{'}}{\ensuremath{-}7}^{\ensuremath{'}}$-dimethyloctyloxy)-1,4phenylene vinylene] and ITO is indium tin oxide) light-emitting diode (LED) structures, made by physical vap
Autor:
Reza Mahmoudi, Anton de Graauw, Edwin van der Heijden, Ralf M T Pijper, Arthur van Roermund, Pooyan Sakian, E. J. G. Janssen
Publikováno v:
Proceedings of 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SIRF 2010), 11-13 January 2010, New Orleans, Louisiana, 124-127
STARTPAGE=124;ENDPAGE=127;TITLE=Proceedings of 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SIRF 2010), 11-13 January 2010, New Orleans, Louisiana
STARTPAGE=124;ENDPAGE=127;TITLE=Proceedings of 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SIRF 2010), 11-13 January 2010, New Orleans, Louisiana
This paper presents a two-stage fully integrated 60 GHz differential Low Noise Amplifier implemented in a TSMC bulk CMOS 65 nm technology. Implementation of a voltage-voltage feedback enables the neutralization of the Miller capacitance and the achie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ccb286f7ac8c2070459f1c2b32e3d444
https://doi.org/10.1109/smic.2010.5422843
https://doi.org/10.1109/smic.2010.5422843
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 55:1811-1811