Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ralf Lüdemann"'
Publikováno v:
Progress in Photovoltaics: Research and Applications. 10:29-34
From today's viewpoint future solar cells will be thinner, of higher efficiency and produced in greater numbers. A solar cell concept able to fit these developments could be the passivated emitter and rear cell. With a new laser-based process (laser-
Publikováno v:
Progress in Photovoltaics: Research and Applications. 7:387-392
Damage-free reactive ion etch processes have been developed that allow the formation of grooves with intentional under-etching of the mask, e.g. photo resist. In a succeeding metal evaporation step this very same mask obstructs the deposition of meta
Autor:
Sebastian Schaefer, Ralf Lüdemann
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:749-754
New concepts in silicon solar cell design require dry processing technologies. For this reason two reactive ion etching (RIE) processes have been developed: one for surface cleaning and one for the removal of phosphorous glass (PSG). However, damage
Autor:
Ralf Lüdemann
Publikováno v:
Materials Science and Engineering: B. 58:86-90
The use of hydrogen for passivation of multicrystalline silicon in solar cell technology is described. Three kinds of hydrogen incorporation into mc-Si solar cells have been evaluated: hydrogen diffusion out of a SiN-layer (SiN:H), low-energy hydroge
Autor:
Andreas Fell, M. Mesec, D. Manz, A. Bentzen, D. H. Neuhaus, Ralf Lüdemann, Daniel Kray, T. Schlenker, E. Sauar, Gerhard Willeke, Bernd Bitnar, Ralph Müller, Monica Aleman, Bernold Richerzhagen, Sybille Hopman, Alexandre Pauchard, Stefan W. Glunz, Kuno Mayer
Publikováno v:
2008 33rd IEEE Photovoltaic Specialists Conference.
The introduction of selective emitters underneath the front contacts of solar cells can considerably increase the cell efficiency. Thus, cost-effective fabrication methods for this process step would help to reduce the cost per W p of silicon solar c
Autor:
Stefan W. Glunz, Gerhard Willeke, Sebastian Schaefer, E. Schneiderlochner, Wilhelm Pfleging, Ralf Lüdemann, Ralf Preu
Publikováno v:
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).
New processing schemes for fabricating the rear contact pattern of the PERC-structure (passivated emitter and rear cell) are demonstrated. Both, thermally-grown silicon oxide (SiO/sub 2/) and plasma-deposited silicon nitride (SiN/sub x/) are used as