Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Ralf Gogolin"'
Autor:
Jan Schmidt, Antoine Descoeudres, Matthieu Despeisse, Dimitri Zielke, Ralf Gogolin, Christophe Ballif
Publikováno v:
Energy Procedia 124 (2017)
In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high Voc value of 688 mV after full-area metallization of the PEDOT:PSS. We achieve this by combi
Autor:
Ralf Gogolin, Jan Schmidt, Dimitri Zielke, Wilfried Lövenich, Marc-Uwe Halbich, Rüdiger Sauer
Publikováno v:
AIP Conference Proceedings.
Autor:
Juliane Clemens, Ralf Gogolin, Rolf Brendel, R. Ferre, Jan Schmidt, Nils-Peter Harder, Mircea Turcu
Publikováno v:
IEEE Journal of Photovoltaics. 4:1169-1176
We present an experimental method to quantify the series resistance R a-Si/ITO through the a-Si:H layers and the a-Si:H/ITO interface on test structures. In order to optimize R a-Si/ITO , we apply different a-Si:H and ITO deposition parameters. We fi
Publikováno v:
Solar Energy Materials and Solar Cells. 106:47-50
Surface passivation of hydrogenated amorphous silicon (a-Si:H) films is critically influenced by the hydrogen/silane ratio during PECVD deposition. Das et al. (2008) studied this effect with respect to the crystal orientation of c-Si wafer substrates
Autor:
R. Ferre, T. F. Schulze, Nicola Mingirulli, Ralf Gogolin, Lars Korte, Nils-Peter Harder, Jan Düsterhöft, Jan Haschke
Publikováno v:
IEEE Journal of Photovoltaics. 1:130-134
We compare recently reported results of efficient back-contacted amorphous/crystalline silicon heterojunction solar cells with fill factors up to 78.8% with calculated j-V characteristics that are derived from an area-weighted summation of recombinat
Autor:
Ralf Gogolin, Jan Schmidt, Marc-Uwe Halbich, Rüdiger Sauer, Dimitri Zielke, Wilfried Lövenich, Cornelia Marquardt
Publikováno v:
Solar RRL. 2:1700191
Publikováno v:
physica status solidi (a). 208:1964-1966
We demonstrate laser transfer doping (LTD) for producing locally doped regions in surface passivated Silicon wafers. A pulsed laser transfers phosphorus-doped amorphous silicon from a carrier glass to a surface passivated silicon wafer. We employ thi
Autor:
R. Ferre, Ralf Gogolin, T. F. Schulze, Jan Haschke, Nils-Peter Harder, Nicola Mingirulli, Bernd Rech, Lars Korte, Rolf Brendel, Jan Düsterhöft
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 5:159-161
We present back-contacted amorphous/crystalline silicon heterojunction solar cells (IBC-SHJ) on n-type substrates with fill factors exceeding 78% and high current densities, the latter enabled by a SiNx /SiO2 passivated phosphorus-diffused front surf
Autor:
Thorsten Dullweber, Ralf Gogolin, Verena Steckenreiter, Rolf Brendel, Jan Hendrik Petermann, Sarah Kajari-Schröder, Henning Schulte-Huxel, S. Eidelloth
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
We demonstrate the module interconnection by means of screen printing. The metallization paste is printed over the edge of five heterojunction solar cells. This connects the frontside of a cell to an underlying Al-patterned rear-side contact of the n
Autor:
Jan Haschke, Yi-Yang Chen, Bernd Rech, Mathias Mews, Ralf Gogolin, Lars Korte, Nicola Mingirulli
Publikováno v:
Energy Procedia 38 (2013)
In this paper, interdigitated back contacted silicon heterojunction (IBC-SHJ) solar cell results as well as two dimensional device simulations are presented. The simulation indicates that for the minority contact (emitter) the coverage of the metalli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::146c0f2268ff53163365c5548a6cde88
https://www.repo.uni-hannover.de/handle/123456789/4510
https://www.repo.uni-hannover.de/handle/123456789/4510