Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Rakshit, Titash"'
In this paper we present an algorithm-hardware codesign for camera-based autonomous flight in small drones. We show that the large write-latency and write-energy for nonvolatile memory (NVM) based embedded systems makes them unsuitable for real-time
Externí odkaz:
http://arxiv.org/abs/1905.06314
Neuromorphic Multiply-And-Accumulate (MAC) circuits utilizing synaptic weight elements based on SRAM or novel Non-Volatile Memories (NVMs) provide a promising approach for highly efficient hardware representations of neural networks. NVM density and
Externí odkaz:
http://arxiv.org/abs/1809.04982
We report on measurements and modeling of FE HfZrO/SiO2 Ferroelectric-Dielectric (FE-DE) FETs which indicate that many of the phenomena attributed to Negative Capacitance can be explained by a delayed response of ferroelectric domain switching - refe
Externí odkaz:
http://arxiv.org/abs/1809.02053
Pulse-based studies of ferroelectric capacitor systems have been used by several groups to experimentally probe the mechanisms of apparent negative capacitance. In this paper, the behavior of such systems is modeled through SPICE simulation with a de
Externí odkaz:
http://arxiv.org/abs/1801.01842
Autor:
Obradovic, Borna, Rakshit, Titash, Hatcher, Ryan, Kittl, Jorge, Sengupta, Rwik, Hong, Joon Goo, Rodder, Mark S.
A multi-bit digital weight cell for high-performance, inference-only non-GPU-like neuromorphic accelerators is presented. The cell is designed with simplicity of peripheral circuitry in mind. Non-volatile storage of weights which eliminates the need
Externí odkaz:
http://arxiv.org/abs/1710.08034
Autor:
Obradovic, Borna, Rakshit, Titash, Wang, Wei-E, Lin, Dennis, Waldron, Niamh, Collaert, Nadine, Rodder, Mark S.
InGaAs-based Gate-all-Around (GAA) FETs with moderate to high In content are shown experimentally and theoretically to be unsuitable for low-leakage advanced CMOS nodes. The primary cause for this is the large leakage penalty induced by the Parasitic
Externí odkaz:
http://arxiv.org/abs/1705.06731
An analysis of recent experimental data for high-performance In0.7Ga0.3As high electron mobility transistors (HEMTs) is presented. Using a fully quantum mechanical, ballistic model, we simulate In0.7Ga0.3As HEMTs with gate lengths of LG = 60nm, 85, a
Externí odkaz:
http://arxiv.org/abs/0810.1540
We derive a general result that can be used to evaluate and compare the transconductance of different field-effect mechanisms in molecular transistors, both electrostatic and conformational. The electrostatic component leads to the well-known thermal
Externí odkaz:
http://arxiv.org/abs/cond-mat/0212166
This paper addresses the question of whether a ``rigid molecule'' (one which does not deform in an external field) used as the conducting channel in a standard three-terminal MOSFET configuration can offer any performance advantage relative to a stan
Externí odkaz:
http://arxiv.org/abs/cond-mat/0206328
Publikováno v:
IEEE Transactions on Electron Devices. 65:5157-5164
We report on measurements and modeling of FE HfZrO/SiO2 Ferroelectric-Dielectric (FE-DE) FETs which indicate that many of the phenomena attributed to Negative Capacitance can be explained by a delayed response of ferroelectric domain switching - refe