Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Rakovics, V"'
Publikováno v:
In Journal of Crystal Growth 15 June 2017 468:572-575
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 2004 23(3):334-338
Publikováno v:
In Vacuum 2003 71(1):113-116
Autor:
Rakovics, V.1, Imenkov, A.2, Sherstnev, V.2, Serebrennikova, O.2, Il'inskaya, N.2, Yakovlev, Yu.2 Yak@iropt1.ioffe.ru
Publikováno v:
Semiconductors. Dec2014, Vol. 48 Issue 12, p1653-1656. 4p.
Publikováno v:
In Materials Science & Engineering B 2002 91:491-494
Publikováno v:
In Materials Science & Engineering B 2002 91:83-86
Publikováno v:
EXMATEC '06, 8th International Workshop on Expert Evaluation, Cádiz, 2006
info:cnr-pdr/source/autori:Rakovics V., Horváth Zs. J., Horváth Zs. E., Bársony I., Frigeri C., Besagni T./congresso_nome:EXMATEC '06, 8th International Workshop on Expert Evaluation/congresso_luogo:Cádiz/congresso_data:2006/anno:2006/pagina_da:/pagina_a:/intervallo_pagine
info:cnr-pdr/source/autori:Rakovics V., Horváth Zs. J., Horváth Zs. E., Bársony I., Frigeri C., Besagni T./congresso_nome:EXMATEC '06, 8th International Workshop on Expert Evaluation/congresso_luogo:Cádiz/congresso_data:2006/anno:2006/pagina_da:/pagina_a:/intervallo_pagine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::b8a2e74712a13de76d6a16eb3b68d4ea
https://publications.cnr.it/doc/113932
https://publications.cnr.it/doc/113932
Electrical characteristics of p-type Au/lnP Schottky junctions with Pt nanoparticles sandwiched in epitaxial layer have been studied and compared with reference samples. Various anomalies have been obtained, some of them are similar to the behavior o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::64e843855b6a15b107eac4a5949a155e
http://dspace.nbuv.gov.ua/handle/123456789/138817
http://dspace.nbuv.gov.ua/handle/123456789/138817
Publikováno v:
Materials science and engineering. B, Solid-state materials for advanced technology (Online) 91-92 (2002): 83–86.
info:cnr-pdr/source/autori:Rakovics V., Toth A.L., Poedor B., Frigeri C., Balazs J., Horvath Z.E./titolo:LPE growth and Characterization of Ga1-xInxAsySb1-y quaternary alloys/doi:/rivista:Materials science and engineering. B, Solid-state materials for advanced technology (Online)/anno:2002/pagina_da:83/pagina_a:86/intervallo_pagine:83–86/volume:91-92
info:cnr-pdr/source/autori:Rakovics V., Toth A.L., Poedor B., Frigeri C., Balazs J., Horvath Z.E./titolo:LPE growth and Characterization of Ga1-xInxAsySb1-y quaternary alloys/doi:/rivista:Materials science and engineering. B, Solid-state materials for advanced technology (Online)/anno:2002/pagina_da:83/pagina_a:86/intervallo_pagine:83–86/volume:91-92
Band gap, solid phase composition and lattice mismatch data are presented characterising Ga1-xInxAsySb1-y layers grown by liquid phase epitaxy (LPE) on 100 oriented GaSb substrate. Nearly lattice-matched (a/a0.15%) Ga1-xInxAsySb1-y layers were grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::ec8d7de3dffaad6737ac41aaae7c4627
http://www.cnr.it/prodotto/i/32198
http://www.cnr.it/prodotto/i/32198
Publikováno v:
Materials science and engineering. B, Solid-state materials for advanced technology (Online) 91-92 (2002): 491–494.
info:cnr-pdr/source/autori:Rakovics V., Puspoki S., Balazs J., Réti I., Frigeri C./titolo:Spectral characteristics of InP%2FInGaAsP Infrared Emitting Diodes grown by LPE/doi:/rivista:Materials science and engineering. B, Solid-state materials for advanced technology (Online)/anno:2002/pagina_da:491/pagina_a:494/intervallo_pagine:491–494/volume:91-92
info:cnr-pdr/source/autori:Rakovics V., Puspoki S., Balazs J., Réti I., Frigeri C./titolo:Spectral characteristics of InP%2FInGaAsP Infrared Emitting Diodes grown by LPE/doi:/rivista:Materials science and engineering. B, Solid-state materials for advanced technology (Online)/anno:2002/pagina_da:491/pagina_a:494/intervallo_pagine:491–494/volume:91-92
InGaAsP/InP double heterostructure infrared emitting diodes were grown by liquid phase epitaxy. Eleven different diodes were fabricated with optimal spacing of their peak emission wavelengths in order to have sufficient overlapping of their spectra.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::85faeff032c22faebf3f071f2f2da8a1
http://www.cnr.it/prodotto/i/32197
http://www.cnr.it/prodotto/i/32197