Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Rakesh Sohal"'
Autor:
Stephan Suckow, Martin Kittler, Maryam Beigmohamadi, B. Berghoff, Bernd Spangenberg, Teimuraz Mchedlidze, Rakesh Sohal, Noël Wilck, Tzanimir Arguirov, Joachim Mayer
Publikováno v:
physica status solidi (a). 208:588-591
Comparative structural analyses of a crystallized, 60 nm thick silicon film deposited on quartz substrate were performed using high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy (RS). Both methods suggest high degree of c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea804f8a35b56db3d7ab2c1344f1ada3
https://doi.org/10.1002/pssa.201000156
https://doi.org/10.1002/pssa.201000156
Autor:
Konstantin Karavaev, Mohamed Torche, Yevgen Burkov, Dieter Schmeißer, Karsten Henkel, Rakesh Sohal, Carola Schwiertz
Publikováno v:
physica status solidi (a). 208:317-329
This work focuses on praseodymium oxide films as a high-k material on silicon and silicon carbide (SiC) in metal insulator semiconductor samples. The electrical results are correlated to spectroscopic findings on this material system. Strong interfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bfec795817c6f618b6e44453a0b1dd5
https://doi.org/10.1002/pssa.201026404
https://doi.org/10.1002/pssa.201026404
Autor:
Olaf Seifarth, Grzegorz Lupina, Christian Walczyk, Peter Zaumseil, Thomas Schroeder, Rakesh Sohal
Publikováno v:
Surface Science. 604:276-282
Process compatible high- k dielectric thin films are one of the key solutions to develop high performance metal–insulator–metal (MIM) structures for future microelectronic devices. Engineered cerium–aluminate (Ce x Al 2– x O 3 ) thin films we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::629cba0ceeb8d2e23ea8522e42104abd
https://doi.org/10.1016/j.susc.2009.11.017
https://doi.org/10.1016/j.susc.2009.11.017
Publikováno v:
Applied Surface Science. 256:2210-2214
A controlled AlGaN surface preparation method avails to improve the performance of GaN-based HEMT devices. A comparative investigation of chemical treatments by (1:10) NH 4 OH:H 2 O and (1:10) HCl:H 2 O solutions for AlGaN surface preparation by X-ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d8987d0b1a3d294dd57333bc73f144e
https://doi.org/10.1016/j.apsusc.2009.09.075
https://doi.org/10.1016/j.apsusc.2009.09.075
Autor:
A. Fox, Dirk Wolansky, Christian Walczyk, Peter Zaumseil, Hans-Joachim Müssig, Thomas Schroeder, Rakesh Sohal, Bernd Tillack
Publikováno v:
Thin Solid Films. 517:4534-4539
This research is targeted to enhance the functionality of bipolar complementary metal-oxide-semiconductor by innovative concepts of embedded resistive random access memory (RRAM) cells integration in the back-end-of-line (BEOL) region. The material o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf7b97c27c6231f4c3eff121ef242824
https://doi.org/10.1016/j.tsf.2008.12.036
https://doi.org/10.1016/j.tsf.2008.12.036
Autor:
Dieter Schmeißer, Karsten Henkel, Patrick Hoffmann, Mohamed Torche, Massimo Tallarida, Rakesh Sohal
Publikováno v:
Materials Science in Semiconductor Processing. 9:945-948
We elaborate the possibility of combining high- k dielectrics with wide band gap semiconductors, i.e. Pr 2 O 3 on SiC. The thermal stability of interfacial aluminum oxynitride (AlON) layers between Pr-oxide and SiC has been investigated by synchrotro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdc5e161973b683bd6d218b8a014e20e
https://doi.org/10.1016/j.mssp.2006.10.047
https://doi.org/10.1016/j.mssp.2006.10.047
Publikováno v:
Superlattices and Microstructures. 40:393-398
Silicon is by far the most important material used in microelectronics, partly due to the excellent electronic properties of its native oxide (SiO2), but substitute semiconductors are constantly the matter of research. SiC is one of the most promisin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1db222875aeca2eff8a3fe0029d12228
https://doi.org/10.1016/j.spmi.2006.07.018
https://doi.org/10.1016/j.spmi.2006.07.018
Publikováno v:
Thin Solid Films.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11d9fd31aeaf87a86c4b6e83b47154c0
https://doi.org/10.1016/j.tsf.2009.12.008
https://doi.org/10.1016/j.tsf.2009.12.008
Autor:
Karsten Henkel, Mohamed Torche, Carola Schwiertz, Yevgen Burkov, Rakesh Sohal, Dieter Schmeißer
Publikováno v:
MRS Proceedings. 996
We investigate the dielectric properties of Praseodymium based oxides and silicates by preparing MIS structures consisting of a metal layer (M), PrOX (praseodymium oxide) as a high-k insulating layer (I), and silicon (Si) or silicon carbide (SiC) as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0beec83daa982ef205b24e1b3c064eb7
https://doi.org/10.1557/proc-0996-h05-23
https://doi.org/10.1557/proc-0996-h05-23
Autor:
Dieter Schmeißer, Carola Schwiertz, Rakesh Sohal, Karsten Henkel, Patrick Hoffmann, Mohamed Torche
Publikováno v:
MRS Proceedings. 911
We combine high-k dielectrics with wide band gap semiconductors for new possibilities for high frequency and high power applications. We investigate the dielectric properties of Praseodymium based oxides and silicates by preparing MIS structures cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a64d909047ef6d914a631b51ec46663b
https://doi.org/10.1557/proc-0911-b10-11
https://doi.org/10.1557/proc-0911-b10-11