Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Rakesh Prasher"'
Publikováno v:
Solid State Sciences. 59:7-14
We report the fabrication of an ultra-thin silicon oxynitride (SiON) as an interfacial layer (IL) for n-Si/ALD-HfO 2 gate stack with reduced leakage current. The XRD, AFM, FTIR, FESEM and EDAX characterizations have been performed for structural and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8aa4dcdc25c01f56c6d410027f0ca257
https://doi.org/10.1016/j.solidstatesciences.2016.07.001
https://doi.org/10.1016/j.solidstatesciences.2016.07.001
The exponential rise in the density of silicon CMOS transistors has now reached a limit and threatening to end the microelectronics revolution. To tackle this difficulty, group III–V compound semiconductors due to their outstanding electron transpo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3005155fda9e81c2830346269ffa9421
Publikováno v:
VLSI Design
In this paper, we present the fabrication and characterization of Al/HfO2/Si gate stack with improved physical and electrical gate stack parameters such as dielectric constant (k), equivalent oxide thickness (EOT), interface trap density (Dit) and ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5e7f94623f66c8f79a604385377483e
https://doi.org/10.1109/vlsid.2016.71
https://doi.org/10.1109/vlsid.2016.71
Publikováno v:
2014 International Conference on Signal Propagation and Computer Technology (ICSPCT 2014).
In this paper, a gate-all-around Si Nanowire FET (NWFET) and InAs NWFET have been studied and compared with respect to various performance parameters. The device metrics considered at the nanometer scale are transfer characteristics, transconductance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e38e86076ce1227d42eccb61d815af6
https://doi.org/10.1109/icspct.2014.6884901
https://doi.org/10.1109/icspct.2014.6884901
Publikováno v:
Physics of Semiconductor Devices ISBN: 9783319030012
Previously, simulations were carried out on the classical drift diffusion technique which no longer supports the present day criteria in a 3D domain. Now-a-days, we enhance our simulation capabilities by performing simulation at an atomistic level ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1cc6b7826c1f0bf4fad43fd3f5e6f3e
https://doi.org/10.1007/978-3-319-03002-9_146
https://doi.org/10.1007/978-3-319-03002-9_146
Publikováno v:
Physics of Semiconductor Devices ISBN: 9783319030012
Due to the inherently lower bandgap and larger permittivity of III–V materials, III–V MOSFETs are more susceptible to short-channel effects (SCE). They show promising improvement in drain-induced barrier lowering (DIBL), due to suppressed SCE. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6505514aac0056ef2fb16427e6389b55
https://doi.org/10.1007/978-3-319-03002-9_174
https://doi.org/10.1007/978-3-319-03002-9_174
Publikováno v:
Physics of Semiconductor Devices ISBN: 9783319030012
As the size of the Si MOSFET approaches towards its limiting value, various short channel effects appear to affect its performance. Carbon nanotube field effect transistor (CNTFET) is one of the novel nanoelectronic devices that overcome those MOSFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d7fbe71dc1a3cb98f3a14ee3accc0bd
https://doi.org/10.1007/978-3-319-03002-9_147
https://doi.org/10.1007/978-3-319-03002-9_147
Publikováno v:
Physics of Semiconductor Devices ISBN: 9783319030012
As the size of the MOSFET is reduced, various short channel effects (SCEs) appears that degrade its performance. Multigate nanowire FET is one of the novel nanoelectronic devices that overcome these MOSFET limitations. The silicon nanowire field effe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcb9b9065502e41221a51cb232c7c85a
https://doi.org/10.1007/978-3-319-03002-9_177
https://doi.org/10.1007/978-3-319-03002-9_177
As scaling down Si MOSFET devices degrade device performance in terms of short channel effects. Carbon nanotube field effect transistor (CNTFET) is one of the novel nanoelectronics devices that overcome those MOSFET limitations. The carbon nanotube f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2001::bd0f7bc07b4abfca363b388bad59cbd8
http://essuir.sumdu.edu.ua/handle/123456789/31008
http://essuir.sumdu.edu.ua/handle/123456789/31008
In this paper, we have studied a double gate nanoscale MOSFET for various channel materials using simulation approach. The device metrics considered at the nanometer scale are subthreshold swing (SS), drain induced barrier lowering (DIBL), on and off
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2001::564d58f1b3d388ee993609141c88a159
http://essuir.sumdu.edu.ua/handle/123456789/30971
http://essuir.sumdu.edu.ua/handle/123456789/30971