Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Rajko M. Šašić"'
Autor:
Petar M. Lukić, Rajko M. Šašić
Publikováno v:
Materials Science Forum. 555:125-130
Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81c2b1b20136827d058b71f216b2735a
https://doi.org/10.4028/www.scientific.net/msf.555.125
https://doi.org/10.4028/www.scientific.net/msf.555.125
Publikováno v:
Materials Science Forum. 555:101-106
The focus of this paper was the investigation and modeling of transport characteristics in a strained SiGe based MOSFET structure, which might be of fundamental importance for the understanding of its operating characteristics. In the investigation,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75de24bb3cbc2b6778ac44eb91a115e2
https://doi.org/10.4028/www.scientific.net/msf.555.101
https://doi.org/10.4028/www.scientific.net/msf.555.101
Publikováno v:
Materials Science Forum. 494:43-48
In this paper a new analytical carrier mobility model of a heterostructure unipolar transistor, High Electron Mobility Transistor (HEMT), is presented. The influence of the two dimensional electron gas confined in a HEMT channel on the device carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c0876f26fc4f9eea8afc95f631eb8cc
https://doi.org/10.4028/www.scientific.net/msf.494.43
https://doi.org/10.4028/www.scientific.net/msf.494.43
Publikováno v:
Physica Scripta
Based on the approximate solution of Poisson?s equation in the case of a p-doped silicon body, an improved current-voltage characteristic model of long-channel cylindrical surrounding-gate Si nanowire MOSFET is proposed. The improvement itself consid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63afa9e60926d1f81c1962e1baed5a19
http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2696
http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2696
Publikováno v:
Key Engineering Materials
The posibilities of graphic STM image simulation at atomic level are indicated. The presented procedure takes into account various types of deformation on the surface near the Fermi level. A clean Si(111)7X7 surface is considered as the representativ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6323a7a54bab6c218d7ab7f3782be4b
https://doi.org/10.4028/www.scientific.net/kem.132-136.718
https://doi.org/10.4028/www.scientific.net/kem.132-136.718
Publikováno v:
2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings
In this paper a new analytical model of a silicon Thin Film Transistor (Si TFT) with cylindrical source and drain, is presented. In first part of the text. some basic TFT characteristics and possible applications are exposed. Analytical model is deve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e93caaff3286746d469d980c9703c6f3
https://doi.org/10.1109/icmel.2008.4559256
https://doi.org/10.1109/icmel.2008.4559256
Autor:
Karlo Raić, Rajko M. Šašić
Publikováno v:
Applied Surface Science
The possibilities of graphic STM image simulation of a clean Si(1 1 1) 7 × 7 surface at atomic level are indicated. The presented procedure takes into account various types of deformation on the surface near the Fermi level in order to classify them
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47b242c272da43aa5530307617b14160
http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1082
http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1082