Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Rajesh Sathiyanarayanan"'
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee556d99f5b035496588d9de6a251c92
https://doi.org/10.1109/icee56203.2022.10117770
https://doi.org/10.1109/icee56203.2022.10117770
Publikováno v:
2020 5th IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e54f148b3b7edc692b67ea19bdd73f2d
https://doi.org/10.1109/icee50728.2020.9777053
https://doi.org/10.1109/icee50728.2020.9777053
Publikováno v:
Journal of Vacuum Science & Technology A. 39:062601
Ion treatment of face-centered cubic and amorphous TaN films is studied using classical molecular dynamics simulations. We investigated the effect of ion type (Ne, Ar, Kr, and Xe) and its energy (50, 100, 150, and 200 eV) on the sputtering yield of T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b8a50964edf25dd3281aaf3d64e0026
https://doi.org/10.1116/6.0001251
https://doi.org/10.1116/6.0001251
Autor:
Injo Ok, Tenko Yamashita, Su Chen Fan, Vijay Narayanan, Takashi Ando, Shahrukh A. Khan, Huiming Bu, Patrick W. DeHaven, Rajesh Sathiyanarayanan, Rajan K. Pandey, Anita Madan, Q. Yuan, A. Dasgupta, M. Chace
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
We identified unique device width and length dependencies of Vt for FinFET Replacement Metal Gate (RMG). Choice of fill metal is important to obtain a flat Vt-Wdes trend. We proposed a new model for Vt-Lg roll-up for High-k last RMG and demonstrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa9ebd55574294d40aba2f80054590c1
https://doi.org/10.1109/iedm.2015.7409747
https://doi.org/10.1109/iedm.2015.7409747
Publikováno v:
The Journal of Physical Chemistry C. 115:18983-18990
We use molecular dynamics simulations to study the role played by solvent in promoting anisotropic growth of colloidal nanostructures. Considering the growth of Ag nanowires and nanoplates in organic solvent, we study how solvent influences the aggre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cff6252b569a42d1a57b940114103a1d
https://doi.org/10.1021/jp2046307
https://doi.org/10.1021/jp2046307
Publikováno v:
Surface Science. 603:2387-2392
We have parameterized the various interactions between Cu adatoms on Cu(1 1 0) using density-functional theory based ab-initio calculations. Our results indicate that in addition to pair interactions, 3-adatom and 4-adatom interactions of significant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65f606dc83c7c051b27f711a05f1056c
https://doi.org/10.1016/j.susc.2009.05.012
https://doi.org/10.1016/j.susc.2009.05.012
Publikováno v:
Surface Science. 602:1243-1249
Using ab-initio density functional theory, we have calculated the difference between A- and B-step formation energies on Pt(1 1 1) from orientation-dependent trio interactions. Our results show that the ratio of step formation energies is dependent o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fec403affd6706edfcaddf495558afce
https://doi.org/10.1016/j.susc.2008.01.022
https://doi.org/10.1016/j.susc.2008.01.022
Autor:
T. Hook, Pavan S. Chinthamanipeta, James Chingwei Li, Richard G. Southwick, Balasubramanian S. Pranatharthi Haran, T. Gow, James H. Stathis, Veeraraghavan S. Basker, Rajesh Sathiyanarayanan, Donald F. Canaperi, C-H. Lin, S. Kanakasabapathy, Zuoguang Liu, F. Chen, A. Bryant, Anita Madan, Leo Tai, Kota V. R. M. Murali, Sanjay Mehta, Yiping Yao, Tenko Yamashita, Mukesh Khare, Huiming Bu, R. Kambhampati, Marinus Hopstaken, Z. Zhu, Shahrukh A. Khan, P. Oldiges, Amit Kumar, William K. Henson, Stephan A. Cohen, Shreesh Narasimha, D. McHerron, Darsen D. Lu, J. Johnson
Publikováno v:
2015 Symposium on VLSI Technology (VLSI Technology).
FinFET has become the mainstream logic device architecture in recent technology nodes due to its superior electrostatic and leakage control [1,2,3,4]. However, parasitic capacitance has been a key performance detractor in 3D FinFETs. In this work, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::364c7e1ec086b567f6e399efa9c4f0a4
https://doi.org/10.1109/vlsit.2015.7223659
https://doi.org/10.1109/vlsit.2015.7223659
Autor:
Sandip De, Rainer Loesing, Rajesh Sathiyanarayanan, Rajan K. Pandey, H.G. Parks, Srini Raghavan, Shahab Siddiqui, Min Dai, Erdem Kaltalioglu
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:012202
In this study, the authors investigate the impact of radical oxygen plasma on nitrided and annealed atomic layer deposited (ALD) SiO2 as a thick gate oxide (1.65–3 V) with a high-k/metal gate transistor. Time-dependent-dielectric-breakdown voltage,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d95ca8bc03f771863126f2b7f3e2794b
https://doi.org/10.1116/1.4974250
https://doi.org/10.1116/1.4974250
Publikováno v:
Physical Review B. 83
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aca400e32b6eb45b941c92ebc295ead6
https://doi.org/10.1103/physrevb.83.035424
https://doi.org/10.1103/physrevb.83.035424