Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Rajesh Kumar Chellappan"'
Direct Synthesis of Semimetal Phthalocyanines on a Surface with Insights into Interfacial Properties
Autor:
Han Huang, Jinping Hu, Frode S. Strand, Gengwu Ji, Rajesh Kumar Chellappan, Jinbang Hu, Peng Wang, Zheng Jiang, Zhengde Zhang, Zhongshan Li, Kongchao Shen, Ping Huai, Justin W. Wells, Fei Song
Publikováno v:
Hu, J, Strand, F S, Chellappan, R K, Zhang, Z, Shen, K, Hu, J, Ji, G, Huai, P, Huang, H, Wang, P, Li, Z, Jiang, Z, Wells, J W & Song, F 2020, ' Direct Synthesis of Semimetal Phthalocyanines on a Surface with Insights into Interfacial Properties ', Journal of Physical Chemistry C, vol. 124, no. 15, pp. 8247-8256 . https://doi.org/10.1021/acs.jpcc.0c00895
On-surface engineering of supramolecular structures has attracted considerable interest during the past few decades. However, organic nanostructures coordinated by group V semimetals have rarely been demonstrated. Herein, we report the metalation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e0ebd862bf13aac19cf8e3729ffaa97
https://doi.org/10.1021/acs.jpcc.0c00895
https://doi.org/10.1021/acs.jpcc.0c00895
Autor:
Annika Richter, Rosana Blawid, Rajesh Kumar Chellappan, S. P. Cooil, Leander Michels, Stefan Blawid, Vilany Santana, Luciano Almeida Leal, Justin W. Wells, Håkon I. Røst, Geraldo José da Silva, Alenka Behsen, Kristin Høydalsvik Wells
Publikováno v:
14169-14177
RSC Advances
RSC Advances
An optical, electronic and structural characterisation of three natural dyes potentially interesting for application in organic solar cells, curcumin (C21H20O6), bixin (C25H30O4) and indigo (C16H10N2O2), was performed. X-Ray Diffraction (XRD) measure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36f4d9ecb25ba426cbcacf2cc0c0baf4
https://hdl.handle.net/11250/2978494
https://hdl.handle.net/11250/2978494
Autor:
Mattia Cattelan, Benjamen P. Reed, Anton Tadich, Mauricio J. Prieto, Bruce C. C. Cowie, Thomas Schmidt, Justin W. Wells, Lucas de Souza Caldas, S. P. Cooil, Rajesh Kumar Chellappan, Joseph A. Durk, Håkon I. Røst, Antonija Grubišić-Čabo, Gary Wan, Daniel M. Gottlob, Andrew Evans, Frode S. Strand, Liviu Cristian Tanase
Publikováno v:
ACS Applied Materials and Interfaces
37510-37516
ACS Applied Materials & Interfaces
37510-37516
ACS Applied Materials & Interfaces
The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::713f84a37fc64fe67365a1726f69a146
http://hdl.handle.net/11577/3440852
http://hdl.handle.net/11577/3440852
Autor:
Liviu Cristian Tanase, Rajesh Kumar Chellappan, Benjamin P. Reed, Antonija Grubišić-Čabo, Thipusa Wongpinij, Chanan Euaruksakul, Lucas de Souza Caldas, Thomas Schmidt, Anton Tadich, Frode S. Strand, Mauricio J. Prieto, Håkon I. Røst, Bruce C. C. Cowie, Zhongshan Li, Justin W. Wells, S. P. Cooil
Publikováno v:
Røst, H I, Chellappan, R K, Strand, F S, Čabo, A G, Reed, B P, Prieto, M J, Tanase, L C, Caldas, L D S, Wongpinij, T, Euaruksakul, C, Schmidt, T, Tadich, A, Cowie, B C C, Li, Z, Cooil, S P & Wells, J 2021, ' Low-Temperature Growth of Graphene on a Semiconductor ', Journal of Physical Chemistry C, vol. 125, no. 7, pp. 4243–4252 . https://doi.org/10.1021/acs.jpcc.0c10870
The Journal of Physical Chemistry C
Journal of Physical Chemistry C
The Journal of Physical Chemistry C
Journal of Physical Chemistry C
The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::745e9a23a36aa2525ddb10fdf555cbf1
http://hdl.handle.net/10852/91651
http://hdl.handle.net/10852/91651
Autor:
Andraz Krajnc, Goran Drazic, Robert Dominko, Dominique Foix, Rémi Dedryvère, Rajesh Kumar Chellappan, Matic Lozinšek, Bostjan Genorio, Alen Vizintin, Gregor Mali
Publikováno v:
Chemistry of Materials
Chemistry of Materials, 2015, 27 (20), pp.7070--7081. ⟨10.1021/acs.chemmater.5b02906⟩
Chemistry of Materials, American Chemical Society, 2015, 27 (20), pp.7070--7081. ⟨10.1021/acs.chemmater.5b02906⟩
Chemistry of Materials, 2015, 27 (20), pp.7070--7081. ⟨10.1021/acs.chemmater.5b02906⟩
Chemistry of Materials, American Chemical Society, 2015, 27 (20), pp.7070--7081. ⟨10.1021/acs.chemmater.5b02906⟩
International audience; We report on the synthesis of fluorinated reduced graphene oxide (F-rGO) by a direct fluorination of reduced graphene oxide (rGO) with F2 or XeF2/BF3 in anhydrous HF. Characterization performed by high-angle annular dark-field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63d72a6880fb63350a7f3f768f62ead0
https://doi.org/10.1021/acs.chemmater.5b02906
https://doi.org/10.1021/acs.chemmater.5b02906
Autor:
Rémi Dedryvère, Alenka Ristić, Robert Dominko, Nataša Novak Tušar, Miran Gaberšček, Vida Lapornik, Dominique Foix, Rajesh Kumar Chellappan
Publikováno v:
Journal of Power Sources
Journal of Power Sources, Elsevier, 2015, 274, pp.1239-1248. ⟨10.1016/j.jpowsour.2014.10.184⟩
Journal of Power Sources, 2015, 274, pp.1239-1248. ⟨10.1016/j.jpowsour.2014.10.184⟩
Journal of Power Sources, Elsevier, 2015, 274, pp.1239-1248. ⟨10.1016/j.jpowsour.2014.10.184⟩
Journal of Power Sources, 2015, 274, pp.1239-1248. ⟨10.1016/j.jpowsour.2014.10.184⟩
cited By 11; International audience; Discharge/charge process of classical lithium sulphur battery proceeds through intermediate polysulphides which are soluble in classical electrolyte systems. Due to concentration gradient soluble polysulphides eas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1acdbd7cc6dbca3d1fb505711fb67a4b
https://doi.org/10.1016/j.jpowsour.2014.10.184
https://doi.org/10.1016/j.jpowsour.2014.10.184
Publikováno v:
Applied Surface Science. 292:345-349
High resolution soft x-ray photoemission spectroscopy (SXPS) have been used to study the high temperature thermal stability of ultra-thin atomic layer deposited (ALD) HfO2 layers (∼1 nm) on sulphur passivated and hydrofluoric acid (HF) treated germ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b6f0f806b34ff3a65f0a2bd33a522de
https://doi.org/10.1016/j.apsusc.2013.11.142
https://doi.org/10.1016/j.apsusc.2013.11.142
Publikováno v:
Chellappan, R K, Li, Z & Hughes, G 2013, ' High resolution photoemission study of interface formation between MgO and the selenium passivated InAs (1 0 0) surface ', Applied Surface Science, vol. 285, no. Part B, pp. 153-156 . https://doi.org/10.1016/j.apsusc.2013.08.021
Interface formation between an ultra thin MgO layer and the selenium passivated InAs surface has been investigated by soft X-ray photoemission spectroscopy. Atomic hydrogen cleaning of the native oxide covered InAs at 360 °C produced an oxide and ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::480dc26dd3feb4847a8492a1d1b2cb62
https://doi.org/10.1016/j.apsusc.2013.08.021
https://doi.org/10.1016/j.apsusc.2013.08.021
Autor:
Alen Vizintin, Rémi Dedryvère, Rajesh Kumar Chellappan, Robert Dominko, Marya Baloch, Joze Moskon, Devaraj Shanmukaraj, Teófilo Rojo
Publikováno v:
Journal of The Electrochemical Society
Journal of The Electrochemical Society, Electrochemical Society, 2016, 163 (10), pp.A239--A2398. ⟨10.1149/2.1151610jes⟩
Journal of The Electrochemical Society, 2016, 163 (10), pp.A239--A2398. ⟨10.1149/2.1151610jes⟩
Journal of The Electrochemical Society, Electrochemical Society, 2016, 163 (10), pp.A239--A2398. ⟨10.1149/2.1151610jes⟩
Journal of The Electrochemical Society, 2016, 163 (10), pp.A239--A2398. ⟨10.1149/2.1151610jes⟩
International audience; In this study, a gel polymer electrolyte (GPE) based on polymer ionic liquid (PIL) is used in a solvent-free and in a hybrid electrolyte configuration for Li-S batteries. Results obtained in the solvent-free configuration show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cddd941e39477818d45e0a0e40d3c19e
https://hal.archives-ouvertes.fr/hal-01498742
https://hal.archives-ouvertes.fr/hal-01498742
Autor:
S.J.N. Mitchell, Rajesh Kumar Chellappan, B.M. Armstrong, G. Hughes, S.N.A. Murad, David McNeill, Mircea Modreanu, Paul Baine
Publikováno v:
Solid-State Electronics. 78:136-140
Germanium is an attractive channel material for MOSFETs because of its higher mobility than silicon. In this paper, GeO 2 has been investigated as an interfacial layer for high- κ gate stacks on germanium. Thermally grown GeO 2 layers have been prep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ff8ee1e37d59326f46b1d78210d33d3
https://doi.org/10.1016/j.sse.2012.05.048
https://doi.org/10.1016/j.sse.2012.05.048