Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Rajesh Katamreddy"'
Autor:
Nathan Stafford, Ben Feist, Christian Dussarrat, Robert L. Opila, Conan Weiland, Rajesh Katamreddy, Laurie Guerin, Venkateswara R. Pallem
Publikováno v:
ECS Transactions. 19:525-536
Many different organolanthanide molecules are being proposed as metal sources for depositing metal and metal oxide layers for semiconductors by atomic layer deposition (ALD). These precursors need particular physical and thermal properties to be used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5824e874431a807790032284dbc12b06
https://doi.org/10.1149/1.3122114
https://doi.org/10.1149/1.3122114
Publikováno v:
ECS Transactions. 16:113-122
In this study we evaluated several precursors such as tetrakis(dimethylamino) titanium (TDMAT), tetrakis (diethylamino) titanium (TDEAT), tetrakis(ethylmethylamino) titanium (TEMAT) along with novel PrimeTiTM, StarTiTM and TyALDTM for TiO2 ALD applic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31f86efbcb15b25695b22b8a83cd52f2
https://doi.org/10.1149/1.2979986
https://doi.org/10.1149/1.2979986
Publikováno v:
Thin Solid Films. 516:8498-8506
We investigated the effectiveness of SiN and SiON barrier layer in controlling the interfacial reaction between Atomic Layer Deposited (ALD) HfO 2 film and the Si substrate. The HfO 2 film was found to form silicate and silicide at the interface with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9548528c03ea11d8beaae4c5b9c59d5a
https://doi.org/10.1016/j.tsf.2008.05.002
https://doi.org/10.1016/j.tsf.2008.05.002
Publikováno v:
Acta Materialia. 56:710-718
Atomic layer deposition (ALD) of HfAlO x on Si(1 0 0) was carried out using tetrakis-diethylamino hafnium (TDEAH) and tris-diethylamino aluminum (TDEAA) as metal precursors and ozone as oxidizer. ALD temperature windows of TDEAA and TDEAH overlapped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46cb59cb52974b3dc7203b918ed6986f
https://doi.org/10.1016/j.actamat.2007.10.017
https://doi.org/10.1016/j.actamat.2007.10.017
Publikováno v:
Journal of Materials Research. 22:3455-3464
Tetrakis-diethylamino hafnium (TDEAH), tris-diethylamino aluminum (TDEAA), and ozone were used for the atomic layer deposition (ALD) of HfO2, Al2O3, and HfAlOx films. The ALD rates were measured to be 1.1 Å/cycle for HfO2 and 1.3 Å/cycle for Al2O3.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::558b941a3b0bc4d6d70230d051fda052
https://doi.org/10.1557/jmr.2007.0439
https://doi.org/10.1557/jmr.2007.0439
Publikováno v:
Journal of Crystal Growth. 309:12-17
We investigate the effect of thickness of HfO 2 and Al 2 O 3 barrier films on the breakdown temperature of Cu/barrier film/Si structures. The HfO 2 and Al 2 O 3 films are deposited using tetrakis-diethylamino hafnium and tris-diethylamino aluminum, r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::836c1e0aa793fb44aaaa35fcc1e29f86
https://doi.org/10.1016/j.jcrysgro.2007.09.013
https://doi.org/10.1016/j.jcrysgro.2007.09.013
Autor:
Axel Soulet, Rajesh Katamreddy, Gregory Jursich, Christos G. Takoudis, A. W. Nicholls, Ronald S. Inman
Publikováno v:
Thin Solid Films. 515:6931-6937
Thin stoichiometric aluminum oxide films were deposited using tris(diethylamino)aluminum precursor and water. Changes in aluminum oxide film and interfacial regions were studied after post deposition annealing under inert ambience at 600, 800 and 100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f99036ecb259e28eb8de7669819c9d7
https://doi.org/10.1016/j.tsf.2007.02.001
https://doi.org/10.1016/j.tsf.2007.02.001
Publikováno v:
MRS Proceedings. 996
Quantum mechanical simulations were performed to calculate the valence electron energy-loss spectra (VEELS) for hafnium oxide, hafnium silicate, silicon oxide and silicon systems using the full potential Linearized Augmented Plane Wave (LAPW) formali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5d14ef00de1139ea1edb2a2c9781558
https://doi.org/10.1557/proc-0996-h05-27
https://doi.org/10.1557/proc-0996-h05-27
Publikováno v:
MRS Proceedings. 990
Thermally stable, amorphous HfO2 thin films deposited using atomic layer deposition have been studied as a diffusion barrier between Cu and the Si substrate. 4 nm thick as-deposited HfO2 films deposited on Si are characterized with X-ray photoelectro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18de709d8fb5ef29d1bb119146e778cf
https://doi.org/10.1557/proc-0990-b09-03
https://doi.org/10.1557/proc-0990-b09-03
Publikováno v:
MRS Proceedings. 996
Thin films of hafnium oxide were deposited on silicon substrates using tetrakis-diethylamino hafnium as precursor. Two different oxidizers: (a) ozone/oxygen mixture, and (b) dry oxygen were used for comparative study of the effect of different oxidiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f292f6eeae84caeb99da08546be31008
https://doi.org/10.1557/proc-0996-h05-10
https://doi.org/10.1557/proc-0996-h05-10