Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Rajesh K. Bag"'
Autor:
Manna Kumari Mishra, Rajesh K. Sharma, Rachna Manchanda, Rajesh K. Bag, Om Prakash Thakur, Rangarajan Muralidharan
Publikováno v:
AIP Advances, Vol 4, Iss 9, Pp 097124-097124-10 (2014)
Magnetotransport in two distinct AlGaN/GaN HEMT structures grown by Molecular Beam Epitaxy (MBE) on Fe-doped templates is investigated using Shubnikov de-Haas Oscillations in the temperature range of 1.8–6 K and multicarrier fitting in the temperat
Externí odkaz:
https://doaj.org/article/8d377ca82d4149198b6944bfba29ee09
Autor:
Kapil Narang, Vikash K. Singh, Akhilesh Pandey, Ruby Khan, Rajesh K. Bag, D. S. Rawal, M. V. G. Padmavati, Renu Tyagi, Rajendra Singh
Publikováno v:
Journal of Materials Science. 57:5913-5923
Autor:
M. V. G. Padmavati, Ufana Riaz, R.A. Khan, Kapil Narang, Aman Arora, Rajesh K. Bag, Renu Tyagi
Publikováno v:
Materials Today: Proceedings. 36:631-636
The crystalline quality of GaN layer grown on 4H-SiC substrate using Metal Organic Chemical Vapor Deposition (MOCVD) has been improved by reducing the growth rate of GaN. Depth resolved CL (cathodoluminescence) study was also done to analyze the defe
Publikováno v:
Materials Today: Proceedings. 36:637-641
The AlN Nucleation layers (NLs) with different thickness under very high V/III ratio (∼5000) growth conditions were grown on 4H-SiC by metal organic chemical vapor deposition (MOCD). The thickness of the NLs were varied between 10 and 300 nm. Growt
Autor:
R. Raman, Anshu Goyal, Brajesh S. Yadav, Ufana Riaz, Garima Upadhyaya, Aman Arora, Sachin K. Saini, Rajesh K. Bag, M. V. G. Padmavati, R.A. Khan, Jaya Lohani, Vikash K. Singh, Renu Tyagi, Kapil Narang, Anubha Jain
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:14336-14344
In this study, the GaN films were deposited in the multilayered structures under different growth conditions. SIMS analysis showed that intrinsic carbon incorporation around two orders can be controlled effectively by varying the growth parameters. D
Autor:
Kapil Narang, Ruby Khan, Akhilesh Pandey, Vikash K. Singh, Rajesh K. Bag, M.V.G. Padmavati, Renu Tyagi, Rajendra Singh
Publikováno v:
Materials Research Bulletin. 153:111875
Autor:
Sandeep Dalal, R.A. Khan, Renu Tyagi, Akhilesh Pandey, Ufana Riaz, M. V. G. Padmavati, Sachin K. Saini, Rajesh K. Bag, Kapil Narang, Vikash K. Singh
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:18910-18918
AlN nucleation layers (NL) with different thickness were grown on 4H-SiC substrates using MOVPE. The growth evolution of the AlN layer on SiC was investigated. The effect of fully strained AlN nucleation layer (NL) on the AlN/SiC interface and on the
Autor:
Kapil Narang, Akhilesh Pandey, Ruby Khan, Vikash K. Singh, Rajesh K. Bag, M.V.G. Padmavati, Renu Tyagi, Rajendra Singh
Publikováno v:
Materials Science and Engineering: B. 278:115635
Autor:
Meena Mishra, Jagori Raychaudhuri, Rajesh K. Bag, Sudhir Kumar, Santanu Ghosh, Jayjit Mukherjee
Publikováno v:
Semiconductor Science and Technology. 36:105005
Publikováno v:
Journal of Materials Science: Materials in Electronics. 27:2335-2341
Growth of single crystalline AlGaAs nanostructures was carried out on highly lattice mismatched sapphire substrate by metal organic vapor phase epitaxy technique without using any external catalyst. In situ deposited Ga droplets were used as catalyst