Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Rajendra K. Saroj"'
Autor:
Dongha Yoo, Keundong Lee, Youngbin Tchoe, Puspendu Guha, Asad Ali, Rajendra K. Saroj, Seokje Lee, A. B. M. Hamidul Islam, Miyoung Kim, Gyu-Chul Yi
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
Abstract This paper describes the fabrication process and characteristics of dimension- and position-controlled gallium nitride (GaN) microstructure arrays grown on graphene films and their quantum structures for use in flexible light-emitting device
Externí odkaz:
https://doaj.org/article/6213c6cdc7ce4c4f99b8ce6755399cd0
Publikováno v:
IEEE Journal of Quantum Electronics. 58:1-6
Autor:
Puspendu Guha, A. B. M. Hamidul Islam, Miyoung Kim, Rajendra K. Saroj, Keundong Lee, Gyu-Chul Yi, Asad Ali, Seokje Lee, Dongha Yoo, Youngbin Tchoe
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
Scientific Reports
Scientific Reports
This paper describes the fabrication process and characteristics of dimension- and position-controlled gallium nitride (GaN) microstructure arrays grown on graphene films and their quantum structures for use in flexible light-emitting device applicat
Autor:
Shih-Po Chien, Yu-Chen Chang, Kristan Bryan Simbulan, Shantanu Saha, Yu-Fan Chiang, Rajendra K. Saroj, Gyu-Chul Yi, Shamsul Arafin, Ting-Hua Lu, Yann-Wen Lan
Publikováno v:
Applied Physics Letters. 121:182203
Due to its atomic thickness and insulating nature, hexagonal boron nitride (h-BN) is considered to be one of the most promising substrates and gate insulating materials for two-dimensional electronic devices. In this study, polarized Raman spectrosco
Autor:
Youngbin Tchoe, Hyeonjun Baek, Ramesh Ghosh, Bosung Kim, Yunjae Hwang, Rajendra K. Saroj, Gyu-Chul Yi, Sang-Woo Kim, Minho S. Song, Yoonseo Lim, Jun-Beom Park, Hongseok Oh
A facile and novel technique for the fabrication of pressure sensors is reported based on the hybridization of one-dimensional nanomaterials and two-dimensional graphene film. In particular, piezoelectric pressure sensors are fabricated by using vert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::20321d346927eabbb31dbfa978817fa7
https://eprints.gla.ac.uk/248588/1/248588.pdf
https://eprints.gla.ac.uk/248588/1/248588.pdf
Autor:
Rajendra K. Saroj, Puspendu Guha, Sangmin Lee, Dongha Yoo, Eunsu Lee, Jamin Lee, Miyoung Kim, Gyu‐Chul Yi
Publikováno v:
Advanced Optical Materials. 10:2200332
Publikováno v:
APL Materials. 9:060907
This Perspective presents a review of current research activities on one-dimensional (1D) semiconductor nanostructures grown on two-dimensional (2D) nanomaterials for flexible electronic and optoelectronic device applications. For hybrid-dimensional
Publikováno v:
Applied Physics Letters. 117:022108
Here, we have carried out a magnetic field dependent polarization selective photoluminescence (PL) study at 1.5 K on Gd-doped GaN epitaxial layers grown on c-SiC substrates, where the incorporation of Gd has been found to generate three types of defe
Publikováno v:
Thin Solid Films. 691:137582
Ba doped ZnO epitaxial layers (Ba:ZnO) with different Ba concentrations are grown on c-GaN/sapphire templates by chemical vapor deposition technique, where mixture of Ba and Zn powders is used as the source for these metals. Concentration of Ba in th
Publikováno v:
IndraStra Global.
The catalyst free growth of a large density of highly oriented ZnO nanopillars on c-GaN/sapphire templates has been demonstrated through a chemical vapor deposition route. The pillars are found to have a narrow distribution of height and diameter. It