Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Rajeewa Kumar Jaisawal"'
Publikováno v:
IEEE Transactions on Electron Devices. 70:1970-1976
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 22:396-402
Autor:
Saheli Sarkhel, Sunil Rathore, Priyanka Saha, Ankit Dixit, Taha Saquib, Rajeewa Kumar Jaisawal, P.N Kondekar, Navjeet Bagga
Publikováno v:
2023 IEEE Devices for Integrated Circuit (DevIC).
Autor:
Mallikarjun Patil, Rajeewa Kumar Jaisawal, Shashank Banchhor, Navneet Gandhi, Navjeet Bagga, Sunil Rathore, P. N. Kondekar
Publikováno v:
2023 IEEE Devices for Integrated Circuit (DevIC).
Autor:
Rajeewa Kumar Jaisawal, Sunil Rathore, Navneet Gandhi, P. N. Kondekar, Shashank Banchhor, V Bharath Sreenivas, Young Suh Song, Navjeet Bagga
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Autor:
Navneet Gandhi, Rajeewa Kumar Jaisawal, Sunil Rathore, P. N. Kondekar, Shashank Banchhor, Navjeet Bagga
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Autor:
Sunil Rathore, Rajeewa Kumar Jaisawal, P. N. Kondekar, Navneet Gandhi, Shashank Banchhor, Young Suh Song, Navjeet Bagga
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Device Design Aware and Interface Thermal Resistance Assisted Self-Heating Analysis in Nanosheet FET
Autor:
Sunil Rathore, Shashank Kumar Banchhor, Rajeewa Kumar Jaisawal, Ankit Dixit, Pravin Kondekar, Navjeet Bagga
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Autor:
Rajeewa Kumar Jaisawal, Sunil Rathore, Pravin N. Kondekar, Shashank Kumar Banchhor, Navjeet Bagga
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Autor:
SAMEER YADAV, PN Kondekar, Bhaskar Awadhiya, Pranshoo Upadhyay, Rajeewa Kumar Jaisawal, Sunil Rathore
In this paper, a detailed evaluation of negative capacitance FinFET (NC-FinFET) based volatile static random access memory (6T-NCSRAM) is carried out by utilizing L-K equation for ferroelectric and calibrated BSIM-CMG model with 14nm conventional Fin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e01de7f0a2446f5733e99c4b1dc4800f
https://doi.org/10.21203/rs.3.rs-1593256/v1
https://doi.org/10.21203/rs.3.rs-1593256/v1