Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Rajeev Kini"'
Publikováno v:
In Thin Solid Films 2002 417(1):202-205
Publikováno v:
physica status solidi (b). 246:504-507
Dilute III-V alloys containing N or Bi share many features that are common, but some that are distinct. In GaP and GaAs, both the substituent species N and Bi behave as isoelectronic impurity traps and both lead to a giant bandgap bowing phenomenon.
Publikováno v:
Thin Solid Films. 417:202-205
We report here the fabrication of Schottky barriers using polyaniline and insulating polymers like polymethylmethacrylate (PAni–PMMA) blends. The Schottky barriers were prepared by the thermal evaporation of gold metal electrodes on to free-standin