Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Rajeev Dhar Dwivedi"'
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 4, Iss 4, Pp 561-567 (2019)
As organic thin film transistors (OTFTs) are poised to play a key role in flexible and low-cost electronic applications, there is a need of device modeling to support technology optimization and circuit design. This paper demonstrates the technology
Externí odkaz:
https://doaj.org/article/5a25e749db574a8c9dad39fb21c9cb13
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 4, Iss 4, Pp 561-567 (2019)
As organic thin film transistors (OTFTs) are poised to play a key role in flexible and low-cost electronic applications, there is a need of device modeling to support technology optimization and circuit design. This paper demonstrates the technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b87ae87e49898203669f65715c885b90
http://www.sciencedirect.com/science/article/pii/S2468217919302369
http://www.sciencedirect.com/science/article/pii/S2468217919302369
Publikováno v:
International Journal of Advanced Applied Physics Research. :1-5
In this paper we present TCAD simulation and compact modeling of OTFTs. Finite element method (FEM) based numerical simulations have been performed using density of state model and field dependent mobility model to simulate the electrical behavior of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f09908e215d7da2d10d54859f9c53e72
https://doi.org/10.15379/2408-977x.2019.06.01.01
https://doi.org/10.15379/2408-977x.2019.06.01.01
Publikováno v:
Hybrid Nanomaterials-Flexible Electronics Materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9cb4ed69b332621bbfac7dd65fb0e89a
http://www.intechopen.com/articles/show/title/numerical-simulation-and-compact-modeling-of-thin-film-transistors-for-future-flexible-electronics
http://www.intechopen.com/articles/show/title/numerical-simulation-and-compact-modeling-of-thin-film-transistors-for-future-flexible-electronics
Publikováno v:
Superlattices and Microstructures. 120:223-234
The paper report the fabrication and characterization of two different sets of bottom gate top contact ZnO thin film transistors (TFTs) using SiO2 and Al2O3 dielectric layers in an attempt to compare and contrast the effect of gate dielectrics on per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87fab8864cca47ad07a8529136cbb899
https://doi.org/10.1016/j.spmi.2018.05.040
https://doi.org/10.1016/j.spmi.2018.05.040